成果報告書詳細
管理番号20140000000827
タイトル*平成25年度中間年報 新エネルギー技術研究開発革新的太陽光発電技術研究開 (革新型太陽電池国際研究拠点整備事業)ポストシリコン超高効率太陽電池の研究開発 (ナローバンドギャップ太陽電池)
公開日2015/5/1
報告書年度2013 - 2013
委託先名公立大学法人兵庫県立大
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Research and Development of Post-silicon solar cells for ultra-high efficiencies(Narrow Band-Gap Solar Cells)" (FY2008-FY2014) FY2013 Annual Report

AgInTe2 and Cu2Te thin films were fabricated by spattering method for the utilization of narrow bandgap solar cells, because chemically deposited AgInTe2 and Cu2Te layers worked as solar cells in our previous research. Each film was deposited on glass substrate with different temperatures. After coating on the glass substrates, each layer was annealed in nitrogen gas.
For the AgInTe2 layers, the optimal substrate temperature at the spattering deposition was 200 ˚C for the low career density and the high career mobility. After the AgInTe2 deposition, the AgInTe2 layers were annealed to improve the data of the career density and the career mobility. The optimal annealing temperature was 200 ˚C. The career density and career mobility resulted in 1.2 *104 cm2/Vs and 6.9 *1011 cm-3, respectively, which were the better results than those of targets. The semiconductor characteristics (p-type or n-type) of AgInTe2 layers can be modified by the doping effects. The excited career lifetime was improved to 250 ms. The n-type AgInTe2 was obtained by adding Al, Ni, and Cu as dopants. The p-type AgInTe2 was obtained by adding Zn as a dopant.
Although Cu2Te worked as a material for printed solar cells, the electric phenomena of Cu2Te fabricated by sputtering was very poor. The Cu2Te sputtered layer gave the high career density and the low career mobility, which were not suitable for the material of solar cells. Therefore, we have to give up fabrication of solar cells using the Cu2Te sputtered layer.
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