成果報告書詳細
管理番号20150000000014
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) ポストシリコン超高効率太陽電池の研究開発(集光型多接合)
公開日2015/4/15
報告書年度2013 - 2013
委託先名豊田工業大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title:R & D on Innovative Solar Cells (International Research Center for Innovative Solar Cell Program) "Research and Development of Post-silicon solar cells for ultra-high efficiencies (Concentrator Multi-Junction Solar Cells)" (FY2008-FY2014) FY2013 Annual Report

1-2. Analysis of multi-junction solar cells: Defect analysis of InGaAs thin films on GaAs(001) vicinal substrates is carried out in order to control dislocation distribution of solar cell materials. By using a MBE system with an X-ray diffractometer, we have successfully obtained the real-time evolution of both lattice tilting and dislocation density for the InGaAs thin films. In the vicinal substrates toward [110] direction, preferentially-directed slip plane and the annihilation of dislocations were observed.: 1-3. Analysis of materials and cells under concentrator operation: We developed a thermal transfer model for the CPV receiver and estimated the temperature and thermal stress of solar cell using a thermal transfer simulator. The thermal stresses in electrode were estimated. The maximum thermal stress at the center of the finger-electrode was 113.6 MPa in the case of non-uniform light condition. On the other hand, the maximum thermal stress was reduced to 85.9 MPa, and the highest thermal stress was observed in the connected area between bus-electrode and finger-electrode in the case of uniform light condition.: 1-4. III-V on Si structure: We propose novel buffer layers consisting of the layered defect zincblende (InGa)2Se3 compounds for the GaAs on Si(111) system. The layered structured materials are suitable for lattice mismatch and thermal expansion mismatch buffer layers. However, it is necessary to grow a-type (InGa)2Se3 preferentially for use of the buffer layer. We found the vicinal substrates are effective in the preferential growth of a-type In2Se3.: GaAs was evaporated by MBE on the patterned Si substrates. We found out that nanowires (NWs) and thin films grew up on {111} facets and (001) terraces, respectively. The grown NWs had high crystallinity. The formation of NWs and thin films could be controlled by growth conditions.: 2-4. Development of GaInNAs middle cell by CBE: DLTS, DC-DLTS, and ICTS techniques were deployed to identify, characterize the energy states in GaAsN grown by CBE. Among these defects, E2, E4 and H5 were confirmed to act as recombination centers.: The external quantum efficiency have been showing a significant increase with supplying a reverse bias to GaAsN homojunction solar cell. The modeling of these results showed that the back surface recombination velocity is the main cause of this behavior.: 2-5. Crystal growth simulation for III-V-N materials: We perform ab initio calculations of c4x4 periodic GaAs(100) surfaces within density functional theory (DFT). In the present works, we calculated the surface phase diagram as functions of the gas partial pressure and temperature. By the analyses of the p-T surface phase diagram, it is found that there are the 3 transition temperatures for the reconstruction changes in the experimental growth temperature ranges. The calculation results suggest that N stability on the surfaces is changed at those temperatures.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る