成果報告書詳細
管理番号20140000000716
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(ナノ結晶シリコン)
公開日2015/5/16
報告書年度2013 - 2013
委託先名九州大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Research and Development on Innovative Solar Cells Exploring, Multi-junction thin-film solar cells with highly ordered structures (nanocrystalline silicon) (FY2008-2014) FY2013 Annual Report

We succeeded in electrical power generation of Ge quantum-dot (QD) sensitized solar cells with rectification in a TiO2/Ge/polysulfide electrolyte system. The crystalline Ge nanoparticle films are deposited by a high pressure radio-frequency sputtering method in an Ar/H2 gas mixture. Raman spectra of Ge nanoparticle films clearly shows a transition from amorphous to crystalline structure by adding H2 gas. The peak frequency strongly depends on the particle size, and the Ge particle size is deduced to be 6 - 7 nm. We fabricated Ge quantum-dot sensitized solar cells using Ge nanoparticle films, and measured current-voltage characteristic and incident photon-to-current conversion efficiency (IPCE). The photocurrent was detected by light irradiation in a wavelength range less than about 800 nm, and IPCE is 40 % at 350 nm. This device shows short-circuit current of 0.65 mA/cm2, open-circuit voltage of 0.15 V, and fill factor of 0.37.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る