成果報告書詳細
管理番号20150000000584
タイトル*平成26年度中間報告 SIP(戦略的イノベーション創造プログラム) 次世代パワーエレクトロニクス 将来のパワーエレクトロニクスを支える基盤研究開発 超高次非線形誘電率顕微鏡法を用いたSiC基板材料及びパワーエレクトロニクス素子の高性能化に資する評価技術の開発
公開日2015/8/4
報告書年度2014 - 2014
委託先名国立大学法人東北大学
プロジェクト番号P14029
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Titel:Development of Evaluation Techniques for SiC High Quality Substrates and High Performance Power Electronics Devices Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy.(FY2014-FY2015)FY2014 Annual Report

SiO2/SiC interface was investigated with high spatial resolution by super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). Comparison of non-oxidized and thermally oxidized 4H-SiC wafer revealed that only 5 min oxidation makes the interface quality spatially inhomogeneous. SiC wafers with and without post oxidation annealing (POA) in NO ambient were also compared, which showed that the spatial deviation of interface quality was reduced by the treatment. In addition, using SHO-SNDM, local CV curves were two dimensionally mapped and compared between the two SiC wafers (with/without POA). The local CV curve obtained in sample with POA was more close to ideal CV curve (larger voltage dependence and less hysteresis) compared to the CV curves obtained in sample without POA. This result indicates that the POA treatment reduced the interface state density. A voltage dependence of SNDM image was calculated using reconstructed CV curves. This analysis showed that inhomogeneous in SNDM image was reduced as the voltage was increased, which might be related with interface state. SHO-SNDM is promising technique for investigation of SiO2/SiC interface quality.
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