成果報告書詳細
管理番号20150000000604
タイトル*平成26年度中間年報 SIP(戦略的イノベーション創造プログラム) 次世代パワーエレクトロニクス 将来のパワーエレクトロニクスを支える基盤研究開発 SiCパワーデバイス応用による低容量小型パワー集積回路およびパワープロセッシング技術の研究開発
公開日2015/8/4
報告書年度2014 - 2014
委託先名国立大学法人京都大学 学校法人東京電機大学 学校法人千葉工業大学
プロジェクト番号P14029
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約(1) Development of high frequency isolated gated driver: Circuit topologies for high-frequency isolated gate driver have been investigated. The effectiveness of GaN-device usage was confirmed by carrying out the circuit experiments of the driver, which is developed by Kyoto University at (2). Additionally, it was clarified that the class-EF amplifier has a potential for high-frequency isolated gate drivers through the comparisons among the class-D, E, EF, and Φ amplifiers.
(2) Development of SiC gate driver applied GaN device: There has not been developed any high-speed gate drive circuit for SiC MOSFET at MHz order. In this project, we designed and fabricated the common gate drive circuit with GaN based on the previous development. The circuit has an advantage of high efficiency of drive of SiC MOSFET, so as to apply to the converter circuit at high speed switching becomes possible.
(3) Estimation of high frequency characteristics of passive devices: In the isolated flyback converter, a secondary winding of the flyback transformer is used as a choking coil. We designed the flyback transformer for high-speed frequency, it was manufactured by Alps Green Devices Co., Ltd. The frequency response of the transformer having a RM type core with Liqualloy(TM) material were evaluated.
(4) Development of CMOS and integration of power circuit/ (5) Design of Power integrated circuit: A fitting-parameter based simple model has been developed to describe I-V and C-V characteristics of SiC Power MOSFETs. For the I-V characteristics, a threshold-voltage based current model, which is generally used for Si MOSFETs, is utilized. For the C-V characteristics, a capacitance model that considers a vertical current flow of SiC power MOSFET is utilized. The proposed model is implemented into a circuit simulator using Verilog-A hardware description language. The fitting parameters in the model have been estimated for an actual SiC device. Good match between the model and measurements has been observed for both I-V and C-V characteristics.
(6) Development of unified control by digital link cell: Specification of communication protocol for power packet was formulated. Specifications of power router and power mixer were designed and the preparation of experimental set up in the next period was carried out. Development environment for FPGA and VHDL was built up and the fundamental functions were confirmed.
(7) Down sizing of small capacity converter circuits: A flyback converter of 50 W output-class with snubber circuit is expected at 1MHz switching operation. The transient behaviors of the flyback converter is investigated at the switching operation both in energizing and non-energizing states. It is expected to obtain clues of improving simple fry back converter towards high-power output and high-speed switching.
Optimization schemes to determining hierarchical network model, address length and packet format have been investigated.
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