成果報告書詳細
管理番号20150000000608
タイトル*平成26年度中間年報 新世代Siパワーデバイス技術開発 新世代Si-IGBT と応用基本技術の研究開
公開日2015/8/4
報告書年度2014 - 2014
委託先名国立大学法人東京大学 国立大学法人東京工業大学
プロジェクト番号P10022
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title:Research project for new generation Si power device technology development. Research and development of new generation Si-IGBT and the applied basic technique (FY2014-FY2016) FY2014 Annual report.

The purpose of this project is to establish a new generation Si-IGBT technology. The new generation Si-IGBT and related technologies, whose performances are equal to or better than those of the present SiC power devices in terms of breakdown voltages and current density, will be developed by taking full advantage of materials technology, process technology, and new structures. High performance power devices with low on-voltage, large current density, advanced gate drive technology and lower costs will be demonstrated utilizing advanced carrier injection enhancement effects and applied circuit technologies. This project will greatly contribute to strengthening industrial competitiveness of Japanese semiconductor industries and power electronics industries. This year, as a preliminary experiment for 1kV grade IGBT fabrication, we designed and fabricated pin diodes with guard-rings having breakdown voltage higher than 1kV. The measurement results showed that the breakdown voltage was 1.3kV, which is better to the targeted value of 1kV. On the other hand, the process conditions for gate trench structures were optimized. The gate trench structure was fabricated and high gate breakdown voltage was obtained. Two-dimensional process and device TCAD simulation was also performed and the carrier injection enhancement effects were confirmed. Based on the TCAD simulation results, the Si-IGBT structures for device fabrication were designed. For the characterization of wafers and process, we started to evaluate the influence of the device fabrication process on carrier lifetime in the wafers. It was confirmed that the lifetime was more degraded by longer time annealing due to oxygen precipitate. Therefore, we will develop lower temperature and shorter time heat treatment process to avoid degradation of carrier lifetime. We also started CZ crystal growth and crystal evaluation. It was confirmed that the lifetime is longer than 10ms, which is 10 times longer than that in commercial wafers. In order to make full use of the new generation Si-IGBT, the related technologies as well as transistor technology are very important. The conventional gate drive circuits cannot draw out the performance of the new generation Si-IGBT. Therefore, in this project, we will develop new gate drive and circuit technologies suitable for the new generation Si-IGBT. This year, we designed and fabricated the gate drive circuits. The main achievement is that we proposed a new short-circuit protection method and demonstrated the effect by the simulation. We also set up high-voltage characterization measurement system for the switching test.
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