成果報告書詳細
管理番号20150000000618
タイトル*平成26年度中間年報 次世代半導体微細加工・評価基盤技術の開発 EUVマスク検査・レジスト材料技術開発
公開日2015/10/24
報告書年度2014 - 2014
委託先名株式会社EUVL基盤開発センター
プロジェクト番号P10025
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title:EUV mask inspection and resist material research (FY2011-FY2015) FY2014Annual Report

EUV mask blank inspection technology
The ABI capability and stability for defect detection has been enhanced by improving optics. The functions for defect characterization are also installed to enhance the ABI productivity. The printability experiment using NXE3100 and NXE3300 EUV scanners in imec has been completed to find the ABI capability for capturing all the printing defects. Analysing micro CSM images supports the improvement of ABI capability. The image by EUV microscope is being refined by improving a mirror in the optics.
EUV patterned mask inspection technology
We clarified, using lithographic simulation, that a 13nm sized defect was need to be captured by the developing PI tool for hp11nm. In order to achieve the hp11nm PI tool capability, we verified the validity of employing imaging technique using highly accelerated electron by electron trajectory simulation. We have, then, clarified the requiring specification and the configuration of the high throughput PI tool for hp11nm HVM, and the constituent units for the electron optics have been assembled.
EUV resist material research
1. A new EIDEC standard resist (ESR6) was selected through fundamental research on resist reaction mechanism simulations / in situ resist dissolution analyses. Full field EUV exposures of the ESR6 confirm 40% higher sensitivity while maintaining optimal line width roughness or LWR (compared to ESR5). New rinse solutions and slimming agents developed resulted in 15% resolution / 15% LWR improvements with 90% resist defect reduction. Lastly, with simulation results (collaboration with Osaka Univ.), the importance of high acid-generating material concentration was understood.
2. The primary root causes of the contamination gap between EUV and EB were found; (a) the gap of wafer temperature, (b) insufficient contamination limited regime, and (c) mismatch of the ratio of exposure area and pumping speed. The good correlation was found between the contamination thickness and the new metric; k’, which is the ratio of the acid rate constant and molecular weight of de-protection decomposition. The preliminary result on the resist outgassing versus EUV power density has been demonstrated by the high-power EUV irradiation tool.
3. Electrical yield verification of half pitch sub-15 nm DSA patterns using PS-b-PMMA was carried out. Platform development of half pitch sub-10 nm patterning using newly developed block copolymers was also demonstrated. 3-dimensional TEM analysis revealed 3-dimensional internal nanostructures of DSA patterns quantitatively. DSA simulations, Monte Carlo and Ota-Kawasaki model programs, are available as well as Dissipative Particle Dynamics and Self-Consistent Field Theory programs.
ダウンロード成果報告書データベース(ユーザ登録必須)から、ダウンロードしてください。

▲トップに戻る