成果報告書詳細
管理番号20140000000729
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) 高度秩序構造を有する薄膜多接合太陽電池の研究開発 (配列制御ナノ結晶シリコン、メカニカルスタック)
公開日2015/12/2
報告書年度2013 - 2013
委託先名国立大学法人東京農工大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Controlled Nanocrystalline Silicon Material/Mechanical stack (FY2008-2014) FY2013 Annual Report


(1) Fabrication of nc-Si Membrane Cells
Sequential fabrication process flow of quantum-sized nanocrystalline silicon (nc-Si) membrane solar cells has been developed by electrochemical anodisation followed by peeling out from the substrates, annealing, and electrode deposition. Using Si wafers on which a pn junction is formed, nc-Si membranes cells (30 μm thick) were fabricated with a high reliability. To minimize the mechanical stress in nc-Si layers and to passivate nc-Si dot surfaces, super-critical drying and chemical modification are also employed, respectively.
(2) Photonic Characterizations
It has been confirmed from photoluminescence and photoconduction measurements for fabricated cells that the active nc-Si layer exhibits a wide band-gap suitable for the use as a top cell in multi-junction cells, and that the spectral photo-response curve peaks at short-wavelength (around 450 nm) as designed.
(3) Photovoltaic Measurements
The results of detailed photovoltaic measurements under an AM1.5 illumination indicate that the observed high open circuit voltage in nc-Si membrane cells are due to the intrinsic photonic property of wide-gap nc-Si dots. The appropriate surface passivation is a key issue to stabilize and enhance the short-circuit current density JSC. Combining annealing and chemical modification techniques, the photovoltaic characteristics with VOC=0.55 V and JSC=0.4 mA/cm2 were obtained to date.
(4) Related Photoelectrical Functions
Theoretical modeling of hot electron effects in nc-Si dots shows that the important determining factors of photo-carriers avalanche are the effective band gap and the population of quantized electronic states. Based on this result, the high impact ionization rate induced in nc-Si dots is further enhanced in oxidized and disordered structures.


We applied our mechanical stacking technique to solar cells. InGaP/GaAs/Ge three junction solar cells with a size of 8x4 cm2 were prepared. I-V measurement under AM 1.5 light illumination at 100mW/cm2 resulted in a conversion efficiency of 31.6 %. Then we remove the electrode metal at the rear surface of the solar cell. The solar cell was subsequently attached to a silicon substrate using our ITO included adhesive. I-V measurement under AM 1.5 light illumination at 100mW/cm2 resulted in a conversion efficiency of 31.4 %. The connecting resistivity was achieved to be 0.8 Ωcm2.
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