成果報告書詳細
管理番号20140000000730
タイトル*平成25年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発 (革新型太陽電池国際研究拠点整備事業) 高度秩序構造を有する薄膜多接合太陽電池の研究開発 (フッ素系イオン制御プロセス、pn接合内蔵CNT)
公開日2015/12/2
報告書年度2013 - 2013
委託先名東北大学
プロジェクト番号P07015
部署名新エネルギー部
和文要約
英文要約Title: Exploring multi-junction thin-film solar cells with highly ordered structures (pn-junction embedded carbon nanotube) (FY2008-2014) FY2013Annual Report

 Since the channel area of p-n junction embedded SWNT should be proportional to the number of SWNTs, the solar cell performance is expected to be improved by increasing the number of SWNTs between two electrodes. Thus, we attempt to fabricate the multi-channel p-n junction embedded SWNTs solar cell using SWNTs films. We have realized the position controlled doping of Cs ions by combining our plasma ion irradiation technique with the conventional photolithography processing. Prior to the Cs irradiation, the half part of SWNTs channel is covered by a polymer film, which prevents Cs atoms from being encapsulated into SWNTs. Based on the detailed electrical measurements, clear hump current features can be obtained in source-drain current (IDS) vs. gate bias voltage (VG) curves for the position selectively Cs encapsulated SWNTs. To identify the origin of the hump current, an electrical doping method was carried out, which can control the band structure of SWNTs without Cs doping. We prepared two-isolated gate electrodes (TG1, TG2) on the top of pristine-SWNTs film covered by a SiO2 insulating layer. Precise control of SWNTs band structures (p-type or n-type) can be realized by controlling the bias of TG1 and TG2. The IDS-VG feature was investigated for the electrically formed p-n junction SWNTs. As similar with that of position selectively doped Cs@SWNTs, clear hump current can be obtained for the electrically formed p-n junction SWNTs. This indicates p-n junction has been formed inside of SWNTs by the position selective doping of Cs.
 Optoelectrical features were also measured for the p-n junction embedded SWNTs films formed by position selective Cs doping. Rectifying features can be observed for the p-n junction embedded SWNTs. Furthermore, the open circuit voltage and the short circuit current can be also clearly obtained with light irradiation. This is the first result showing the clear solar cell performance with p-n junction embedded SWNTs films. Although the solar cell performances are still low, further progress can be expected by realizing the multi-exciton generation in SWNTs, which is a final goal in this project.

Sub title II-3-3
Development of a new bottom cell system using strongly electron-correlated materials

What we have done in FY2013 is summarized as follows.
First, we tried to grow single crystalline organic charge-transfer (CT) complex DBTTF-TCNQ with ionic liquid (IL) by using our original developed twin-infrared (IR) laser deposition system. The co-deposition via. IL could also result in the stoichiometric formation of DBTTF-TCNQ complex crystalline films, as indicated in IR absorption spectra. After the intense optimization of its process conditions, it has become possible to fabricate at room temperature non-needle-like DBTTF-TCNQ crystalline films with (11-1) orientation that would be used for solar cell devices.
Secondary, we tried the various ways to remove the residual IL after the growth of organic films/crystals in IL, which would be responsible for not operation of their solar cell devices. As a result, the amount of the residual IL could be remarkably removed by more than 95%, estimated by MALDI-TOF-MAS technique, and the solar cell device consequently has first become operatable. The Jsc could reach almost 1mA/cm2, i.e. 500 times as high as before, with PCE of 0.11%.
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