成果報告書詳細
管理番号20150000000732
タイトル*平成26年度中間年報 クリーンデバイス社会実装推進事業 省エネルギー社会を実現する高効率高出力マイクロ波GaN増幅器
公開日2015/12/4
報告書年度2014 - 2014
委託先名三菱電機株式会社 マイクロ波化学株式会社 国立大学法人東京工業大学 学校法人龍谷大学
プロジェクト番号P14016
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Clean Device Promotion Project, " High Efficiency High Power Microwave GaN Amplifiers Realizing Energy-Saving Society", (FY 2014 - FY 2014) FY 2014 Annual Report

(1) Standardization Activity
We have gotten agreements on establishment of the Committee on High efficiency high power microwave GaN amplifiers by June 2015 under 188th Committee on Electromagnetics-Field-Excited Reaction Fields at 6th March 2015. We will extend this committee to a consortium for microwave GaN amplifier standardization. We are now under preparation to establish the committee.
(2) Use case
We made discussion and investigated some use cases for microwave heating chemical reactor with microwave GaN amplifier modules. We decided to employ chemical reactor with about 1000 litters for chemical examination, which is owned by Microwave Chemical Co., Ltd. And the reactor requires 4kW microwave power for the chemical reaction. Six chemical basic examinations were studied to select adequate chemical reaction for microwave heating by GaN amplifier modules.
(3) Configuration of equipment
The electrical specification of GaN amplifier module, that is, output power, frequency, phase and their stabilities, accuracy of phase control etc., was determined to realize 4kW output power. 4kW output power is realized by parallelly-combined four by eight GaN amplifier modules with output power of 500W. Signal generator module were also designed and fabricated. Mechanical and electrical interfaces between GaN amplifier modules and the chemical reactor that would be used in examination of chemical use case.
(4) Device technology
The specification of GaN amplifier module, that is, number of amplifier stage, output power, gain etc., was determined to realize 500W output power. The final-stage amplifier consists of parallelly-combined four unit amplifiers with output power of 150W. GaN Transistors used in the amplifier modules were designed and fabricated. The final stage 150W unit amplifiers were designed for two-type packages by using large signal GaN transistor model. Output power and efficiency are expected to improve by harmonic reflection circuit in the design.
(5) Design of a microwave heating reactor with semiconductor module
It has been verified by calculation that distribution of electric fields in the chemical reactor can be controlled by controlling phase of microwave signals. This phenomenon is an advantage of microwave heating with GaN amplifier module. We planned new examination with a small-type reactor to verify the calculated results.
(6) Demonstration of a microwave heating small reactor with semiconductor module
Electric design of the small-type reactor was finished. We started to design the mechanical structure of the reactor at present.
(7) Research presentations, lectures, press releases, etc..
1 Paper, 9 Conference presentations, 4 lectures and 1 demonstration
This project was as an article in Asahi Digital in 14th Sep. 2014.
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