成果報告書詳細
管理番号20150000000372
タイトル*平成25年度中間年報 次世代半導体微細加工・評価基盤技術の開発 EUVマスク検査・レジスト材料技術開発
公開日2016/4/1
報告書年度2013 - 2013
委託先名株式会社EUVL基盤開発センター
プロジェクト番号P10025
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約EUV mask blank inspection technology The development of illumination intensity correction and the improvement of EUV light source unit further advanced the capability/availability of actinic blank inspection (ABI) for high volume manufacturing. For hp11nm, the effectiveness of x40 optics was investigated. We verified ABI signal intensity as represented by defect topography and predicted defect impact on printing wafer. Inspection effectiveness of a developed micro coherent scatterometry microscope was also examined and has successfully allowed identification of defect characteristics. EUV patterned mask inspection technology Exploring pattern inspection (PI) technology, the developed PI tool was verified to be capable of detecting 28nm sized defect in hp64nm patterns. An inspection system was also built for the developed PI tool,and 18.5h scan time for a mask was verified (consistent with target specification). Defect size for hp11nm generation was also evaluated by high accuracy lithography simulation. This was done taking measured geometrical information into calculation. Electron trajectories in multilayers were also analyzed by experiment/simulation to find optimal dose condition. EUV resist material research 1.Two new EIDEC standard resists (ESR); the ESR4 and ESR5 (negative tone) were selected based on targets in resolution, line width roughness, and sensitivity. Full field EUV exposures evaluations have also confirmed hp16nm lines and spaces resolution with aggressive dipole illumination conditions. Resist process investigations also resulted in higher sensitivities (34% improvement) with new underlayer materials. As for the high NA small field exposure tool, optical components and opto-mechanics have been designed/fabricated successfully. Optical analyses also show projection/illumination optics would meet target specifications. 2.Reduction of outgas tests through the resist family concept has been proposed based on comparative results using model resists of various chemical components (using EUV and electron beam). From the fundamental knowledge of obtained, an advanced outgas qualification criteria was conceptualized and introduced. Furthermore, the effects of various resist components on cleanable contamination were evaluated and clarified. 3.Platform development of hp12-14 nm patterning using the PS-b-PMMA material was demonstrated. A feasibility test of hp7 nm patterning using the PMMA-b-PMAPOSS material was also carried out. Grazing incidence small-angle X-ray scattering analysis using the SPring-8 synchrotron has quantitatively revealed 3 dimensional internal nanostructures of hp7 nm lamellar patterns in this material. Directed self-assembly simulation software powered by the integrated soft material simulator OCTA was also developed. Dissipative Particle Dynamics and Self-Consistent Field Theory programs have also been made available.
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