成果報告書詳細
管理番号20150000000549
タイトル*平成26年度中間年報 SIP (戦略的イノベーション創造プログラム) 次世代パワーエレクトロニクス SiCに関する拠点型共通基盤技術開発 ハイブリッド自動車向けSiC耐熱モジュール実装技術の研究開発
公開日2016/3/25
報告書年度2014 - 2014
委託先名学校法人早稲田大学 国立大学法人九州工業大学 トヨタ自動車株式会社 株式会社デンソー
プロジェクト番号P14029
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Research and development of packaging technology for high temperature resistant SiC module of hybrid automobile under Cross-ministerial Strategic innovation Promotion Program, Next-generation power electronics, FY2014 Annual Report

This report summarizes the progress of the “Research and development of packaging technology for high temperature resistant SiC module of hybrid automobile” under Cross-ministerial Strategic innovation Promotion Program, Next-generation power electronics in fiscal 2014. The project started on Sep.4, 2014 aiming the development of ubiquitous power electronic devices with compact size and high efficiency.
As for the R&D management activity of the interconnection for SiC heat resistant module for HV, we have considered a draft of a patent for optimized heat resistant module.
On the development of the innovative technology, we have realized the new interconnection via nano-nickel material and achieved the interconnenction strength as high as several MPa at 300℃ or more. We have also developed a new plating connection technique using Cu wire, in which the connection strength can be controlled by the plating condition. The connecting interface structure was analyzed by the electron beam scattering and surface analysis technique such as Auger electron spectroscopy. Finally we have integrated several connecting technique and achieved heat resistant mounting of SiC schottky barrier diode (SBD) on the TO type package and confirmed the rectifying behavior without any significant degradations.
As for the selection of the heat resistant insulating resin, 4 type candidate materials were evaluated. They all showed weight reductions less than 0.5% via heating up to 250℃ showing that they can be applied to the heat resistant molding.
In terms of the development of standard packaging, new lead frames applicable to the plating connection of thermal analysis TEG and SiC chips have been designed and trail production has started. The configuration applicable to the three dimensional plating is now under study. Also we have developed a new thermal TEG with higher heat generation by optimizing the layout of metallic elements.
As for the basic study of the optimization of SiC heat resistant module, we have modeled the three dimensional power module. In order to evaluate the parasitic inductance, we have introduced a high frequency electromagnetic filed and circuit analysis system and started the surge analysis. In addition, we have designed and fabricated an inverter circuit to evaluate the parasitic inductance for 1200V SiC-MOSFET and SBD experimentally. Testing apparatus for the power cycle testing were also selected and ordered.
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