成果報告書詳細
管理番号20150000000793
タイトル*平成26年度中間年報 次世代プリンテッドエレクトロニクス材料・プロセス基盤技術開発
公開日2016/4/1
報告書年度2014 - 2014
委託先名次世代プリンテッドエレクトロニクス技術研究組合
プロジェクト番号P10026
部署名電子・材料・ナノテクノロジー部
和文要約
英文要約Title: Development of Basic Technology for Next-generation Printed Electronics Materials and Process Technology
(FY2011-FY2015) FY2014 Annual Report

 In order to accelerate the development of printed electronics industry, advanced printing techniques for flexible device fabrication have been investigated. Continuous printing process for manufacturing a TFT sheet with high quality and high throughput was examined. Conducting ink, semiconductor ink and dielectric ink materials were developed for fabricating a gate electrode, a gate dielectric layer, a semiconductor layer, source drain electrodes and wiring by using developed printing process. Printing machines, which were suitable for these processes, were also designed. Using these newly developed materials and process, relationship between the performance of printed pattern or TFT devices and the condition of the device fabrication process was examined.
 Alignment techniques for preparing flexible TFT sheet with high resolution and accuracy was investigated. High alignment accuracy within 7 um on a flexible film substrate was achieved by the newly developed technique. Print techniques for preparation of a large-area device with high quality and high uniformity were also examined. As a result of controlling the printing condition of the printed TFT, variation of the on current was reduced below 10%.
 Low temperature process was examined to reduce the process damage and increase the throughput for fabricating flexible printed devices. In order to reduce the process temperature, advanced sintering techniques using high density external energy were examined for preparation of a dielectric layer and a conductive layer. Ink materials, which are suitable to these low temperature print processes, were also examined using Nano-metal technology. By applying these newly developed processes, process temperature was reduced into below 120oC. In such a condition, prepared printed TFT device was well active without any signal damages.
 In order to improve the performance of printed TFT, a soluble organic semiconductor material, device structure for printed TFT, and measurement method of printed TFT performance was also examined. We have succeeded in the preparation of a printed TFT device which shows fast response over 1 MHz.
 By applying these developed technologies, CIM controlled automated consistently operating print manufacturing line was constructed for manufacturing of all-printed flexible TFT arrays. By using this manufacturing line, we have demonstrated to prepare flexible TFT back planes and pressure sensors. The line enables us to supply the requested back plane for combining with any kinds of front plane.
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