成果報告書詳細
管理番号20160000000143
タイトル*平成27年度中間年報 エネルギー・環境新技術先導プログラム 中性粒子ビーム励起表面反応による新物質創製
公開日2016/4/15
報告書年度2015 - 2015
委託先名国立大学法人東北大学流体科学研究所 東京エレクトロン株式会社
プロジェクト番号P14004
部署名イノベーション推進部
和文要約
英文要約Title: Creation of new material by neutral beam enhanced surface reaction (FY2015 - FY2016) FY2015 Annual report

The target of this project is to develop a new deposition method of In concentration controllable InGaN thin film on heterogeneous substrate with low temperature using neutral bema enhanced atomic layer deposition (NBEALD) with surface chemical reaction. Especially, deposition of InGaN film with In concentration of 50% or more and green light emission of around 550 nm wavelength by photoluminescence are the target to be archived. To address criteria, our study activities (A-1 and A-2) are reported in FY 2015 below.

A-1: Consideration of gas source system for NBEALD InGaN
Trimethylgallium (TMG), trichlorogallium, and trimethylindium (TMI) are considered as gas sources of Ga and In for NBEALD InGaN process chamber. Therefore, a new gas inlet flange was designed to enable introduction of these gases into vacuum chamber with gas cabinets (under choosing). In FY2015, a lot of information such as gas vapor pressure, considerable process pressure range, foot print of gas cabinet and length of pipe line was researched and merged. The drawing of the new flange was finished and the production is being considered with a processer. Specification of gas cabinets, mass flow controllers, gas lines, exhaust gas processors, and safety equipment was also determined.

A-2: Consideration of installing system for NEBALD InGaN in clean room
For modifying original equipment to NBEALD InGaN equipment, all new of gas cabinets, abatement system, heating system and emergency alarm system have to be installed into clean room. It was confirmed that the system considered in A-1 can fit the clean room. Now total electrical power, water, inert gases and some is under calculating by choosing systems.

All considering chamber parts and systems will be installed in former FY2016 and all have to be set up for process experiments to demonstrate new InGaN thin film by NBEALD method.
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