成果報告書詳細
管理番号20160000000257
タイトル*平成27年度中間年報 エネルギー・環境新技術先導プログラム 低電力積層型半導体用高密度自己組織化配線技術の研究開発
公開日2016/4/29
報告書年度2015 - 2015
委託先名国立大学法人東北大学未来科学技術共同研究センター 株式会社東芝 国立研究開発法人物質・材料研究機構 国立大学法人東京大学
プロジェクト番号P14004
部署名イノベーション推進部
和文要約
英文要約Title : Advanced Research Program for Energy and Environmental Technologies / Research and Development of High Density Interconnection Technology for Low-Power 3D-IC Based on Directed Self-Assembly (FY2015-FY2016) FY2015 Annual Report

(1) Basic studies of directed self-assembly for high density TSV formation
To confirm the possibility of high density TSVs for 3D-IC using the directed self-assembly (DSA), we have studied the phase separation phenomena in nanocomposite materials by computer simulation. We have estimated the phase-separated structure in the nanocomposite with diblock copolymers (A block: PMMA, B block: PS) and metal material (C: metal nanodots) by computer simulation using the mean field approximation based on Self-Consistent Field (SCF) theory. As a result, by optimizing Flory-Huggins χ parameters and metal content, we could obtain the completely phase-separated structure in which cylindrical structures of polymer A are distributed in polymer B, and C component (metal nanodots) is confined within polymer A cylinders. Such cylindrical structure is essential for high density TSV formation. Thus it was confirmed by the computer simulation that high density TSVs can be formed by the directed self-assembly.
To form many TSVs in a deep Si trench by the directed se-f-assembly, polymer materials should be completely filled into the deep Si trench. Theny, we tried to fill polystyrene-polymethylmethacrylate block copolymer (PS-b-PMMA) into deep Si trenches with the diameters of 3μm and 5μm and the depth of 10μm. Si wafers coated by PS-b-PMMA block copolymer were cured at 250℃ in a vacuum ambient. We confirmed that PS-b-PMMA block copolymer was completely filled into the deep Si trench. However the cylindrical structure has not been observed yet because it is not easy to observe the phase-separated nano structures.
Secondly, we tried to fill the polypyrrole nanocomposite material doped with metallic silver nanoparticles into the deep Si trench. We prepared the solution containing composite nanoparticles of polypyrrole doped with tetrafluoroboric acid anion and metallic silver. This solution was dropped onto deep Si trench and then extra solution on Si wafer was evacuated in the vacuum ambient. We confirmed that the deep Si trench was completely filled by the polypyrrole nanocomposite material doped with metallic silver nanoparticles.

(2) Basic studies of fine TSV for hyper-cubic storage devices
The requirements of 3D stacked flash memory with high density TSVs for future hyper-cubic storage devices have been estimated and it was confirmed that a huge number of TSVs more than tens of millions per chip are required since each bit line and word line need TSVs with the diameter of 0.1μm to 0.5μm in such a high density 3D flash memory.

(3) Basic studies of self-organized connection circuits
We have explored self-organized connection circuits for high-density electrodes/TSVs by employing flexible switching matrix. We have explored (1) multiplexer based circuits, (2) redundancy circuits, and (3) error correction circuits, for number of micro-electrodes, and alignment accuracy as parameters.
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