成果報告書詳細
管理番号20160000000330
タイトル*平成27年度中間年報 エネルギー・環境新技術先導プログラム 高品質/高均質薄膜を実現する非真空成膜プロセスの研究開発
公開日2016/5/17
報告書年度2015 - 2015
委託先名国立大学法人京都大学 高知工科大学 国立大学法人東京大学 株式会社FLOSFIA
プロジェクト番号P14004
部署名イノベーション推進部
和文要約
英文要約Title: Advanced Research Program for Energy and Environmental Technologies / Research and Development on Non-Vacuum-Based Processes for Thin Films of High-Quality and High-Uniformity (FY2014-FY2016) FY2015 Annual Report

We have successfully accomplished our milestones of this project by realizing growth systems of single-crystalline oxide semiconductors with impurity concentrations in a range of 10^16 cm-3 on 4-inch wafers and coating thin films at a deposition rate of 100 nm/min, uniformity of <5%, and source efficiency of >80% on 100-mm-square or 4-inch wafers. This has been supported by our efforts as shown below.
1. Based on the knowledge on basic growth conditions, that is, the gas flow rate and the growth temperature, we established design concepts of the growth system for single-crystalline oxide semiconductors. A standard growth system was developed, and in the growth of gallium oxide with it, the impurity concentration was decreased to the level of 10^16 cm-3 with an improved mobility. These features are suitable for actual device applications.
2. Flow analysis in the deposition area was carried out in order to understand the behavior of precursor flow under atmospheric pressure, and basic concepts for controlling the precursor flow under atmospheric pressure have been established. This was followed by development of a prototype based on a large-area flow straightener nozzle and a stable source supplying unit. A general-purpose mist deposition system for coating films was installed.
3. Atomic-scale characterization revealed excellent controllability of multilayer structures by mist deposition. Device-quality thin films were evidenced by the device characteristics.
4. The behavior of micrometer-sized mist droplets in a mist deposition process was investigated experimentally. We found that micrometer-sized mist droplets have a complex behavior, including droplets bouncing on the high-temperature solid surface due to their own vaporization. A simulation model was then developed by incorporating a discrete element method (DEM) codes into a commercial computational fluid dynamics (CFD) simulator. Our investigation showed that the proposed process can successfully deposit the uniform thin films over a wider area and on the surface of 3D structures.
5. In order to achieve stable and uniform flow of mist sources, we developed a new nozzle eliminating condensation of mist sources and a source supplying unit operating stably for 24 hours. By improving materials in the system and developing carbon-free sources, residual impurity concentration could be at the level of 10^16 cm-3 or lower. Prototype growth systems were successfully demonstrated as a milestone of this project.
6. The supervising committee meetings, chaired by Professor Hirao at Kyoto University, were held six times to discuss the future direction of this project.
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