成果報告書詳細
管理番号20160000000698
タイトル*平成27年度中間年報 SIP(戦略的イノベーション創造プログラム)/次世代パワーエレクトロニクス SiCに関する拠点型共通基盤技術開発 ハイブリッド自動車向けSiC耐熱モジュール実装技術の研究開発
公開日2016/8/23
報告書年度2015 - 2015
委託先名学校法人早稲田大学 国立大学法人九州工業大学 トヨタ自動車株式会社 株式会社デンソー
プロジェクト番号P14029
部署名IoT推進部
和文要約
英文要約Title: Research and development of packaging technology for high temperature resistant SiC module of hybrid automobile under Cross-ministerial Strategic innovation Promotion Program, Next-generation power electronics, FY2015 Annual Report

This report summarizes the progress of the “Research and development of packaging technology for high temperature resistant SiC module of hybrid automobile” under Cross-ministerial Strategic innovation Promotion Program, Next-generation power electronics in fiscal 2015. The project started on Sep.4, 2014 aiming the development of ubiquitous power electronic devices with compact size and high efficiency.
As for the R&D management activity of the interconnection for SiC heat resistant module for HV, we have applied for a patent for interconnection method of electrodes and considered a draft of a patent for optimized heat resistant module.
On the development of the innovative technology, we have developed a new micro-plating technique which enables the interconnection in narrow space between electrodes and SiC devices via Cu wire or balls. We have also integrated several connecting technique and achieved heat resistant mounting of SiC schottky barrier diode (SBD) on the TO type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250℃ without any significant degradations.
As for the selection of the heat resistant insulating resin, five type candidate materials were evaluated and two of them were finally selected. TO247 modules using these selected resins showed good reliabilities via thermal cyclic testing up to 250℃ showing that they can be applied to the heat resistant molding. We have also confirmed the efficiency of primer application before molding on the adhesion of resins.
Thermal TEG for heat-generation and temperature-sensing using SiC wafer was developed in order to evaluate the reliability of SiC modules. We have formed a heat generation layer with a temperature sensor on the SiC wafer and apply the current from the substrate to the heat generation layer. The TEG showed adequate performance as heat-generation and temperature-sensing device.
In terms of the development of standard packaging, new lead frames where SiC devices are connected by nickel micro-plating on both faces、 were developed. We have confirmed the rectifying behavior at 200℃ and 250℃ using this lead frames. Then we fabricated one-leg modules mounting MOSFETs and SBDs aiming for the reliability testing.
As for the basic study of the optimization of SiC heat resistant module, parasitic inductance for several modules were estimated using electromagnetic field simulator (ANSYS). We have confirmed that our new modules show small inductance less than the target value 10nH, which is one fourth of that of existing modules. Heat resistance and heat capacity for existing one-leg modules were evaluated by using power cyclic testing apparatus and confirmed the applicability of our evaluation. 3D-CAD and FEM analysis soft wares were introduced for modules designing and heat dissipation simulation, which enabled designing power modules in a short span of time.
As for designing, fabrication and evaluation of SiC heat-resistant demonstration module, the worst-case heating condition were submitted together with device specifications for the power loss estimation. Transition condition to the demonstration phase and detailed demonstration methods has been proposed.
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