タイトル平成26年度-平成27年度成果報告書 次世代半導体微細加工・評価基盤技術の開発 EUVマスク検査装置・レジスト材料基盤技術開発 EUVレジスト材料設計及び評価基盤技術開発
報告書年度2014 - 2015
和文要約件名:平成26年度-平成27年度成果報告書 「次世代半導体微細加工・評価基盤技術開発/EUVマスク検査装置・レジスト材料基盤技術開発」
英文要約Title:EUV mask inspection tool and resist material fundamental research (FY2014-FY2015)final Report EUV resist material fundamental research; Fundamental research and development was performed on high sensitivity resist materials. Simulation investigations (with Osaka University) on resist reaction mechanisms were carried out to clarify chemical amplification resist (CAR) material guidelines for higher sensitivities at patterning for and beyond hp 11nm. As a result, it was understood that to achieve the line edge roughness (LER) target of <0.9nm, at least 30% photo-acid generator concentration and a quantum efficiency less than 2 will be necessary. On the research and development of acid amplifier materials for higher EUV sensitivity (with Tokyo University of Science), the optimal design and synthesis of a new polymer-bound acid amplifier resin was successfully completed (through numerous material analysis / synthesis and detailed patterning experiments). This resulted in higher sensitivities (2-3 times), well over the target of >30% sensitivity improvement in comparison to the reference CAR material. Meanwhile, investigations on high EUV sensitivity material platforms at EIDEC have resulted in the development of a new non-chemical amplification metallic resist (EIDEC standard metallic resist or ESMR), which is the first in Japan. Using the ESMR; 17nm lines were fabricated at an ultra-high sensitivity of 7mJ/cm2. Moreover, through detailed reaction mechanism analyses (with National Institute of Advanced Industrial Science and Technology), the film structural analysis of the metal resists was directly visualized (first in the world). These results provide significant pointers in further improving the lithographic performance of metal resists from the point of view of material design. High-NA exposure tool; In FY2014; Illumination modules were assembled off-line on a bench. After the precise inter module alignment, the coordinates of each module were recorded by using laser tracker. This makes it possible to quickly reproduce the inter module alignment on HSFET. On the other hand, SFET was disassembled to replace the PO (Projection Optics) baseplate for HSFET. After replacing modules like wafer stage, mask stage and so on, system was adjusted including EUV light source control. Then illumination modules were installed onto HSFET. In FY2015; PO parts like M1 mirror, M2 mirror and so on were assembled. The wave front error 0.29nmRMS was achieved and the PO was installed on HSFET. Alignment between PO object point and mask, variable NA installation, alignment between illumination optics and PO were done. Then after pumping down and best focus search, wafer exposure work started. 10nm L/S modulation, 11nm-12nm L/S and 15nm contact hole patterning were observed.