成果報告書詳細
管理番号20160000000783
タイトル*平成27年度中間年報 SIP(戦略的イノベーション創造プログラム)/次世代パワーエレクトロニクス GaNに関する拠点型共通基盤技術開発 GaN縦型パワーデバイスの基盤技術開発
公開日2016/9/7
報告書年度2015 - 2015
委託先名国立大学法人京都大学 三菱化学株式会社 住友電気工業株式会社 株式会社豊田中央研究所 富士電機株式会社 パナソニック株式会社 国立研究開発法人産業技術総合研究所 国立大学法人大阪大学 国立大学法人北海道大学 国立大学法人名古屋大学 国立大学法人福井大学 国立大学法人京都工芸繊維大学 国立大学法人筑波大学 国立大学法人東北大学 国立大学法人大阪大学
プロジェクト番号P14029
部署名IoT推進部
和文要約
英文要約Title: Research and Development of Fundamental Technologies for GaN Vertical Power Devices FY2015 Annual Report

Wide-bandgap semiconductors have attracted great attention as materials for the next-generation power electronics. Among them, GaN and its related alloy have great potential due to its superior material properties. However, research and development on GaN vertical power devices was not active due to lack of suitable substrates. Vertical power devices can handle large current and high voltage with low on-resistance compared to lateral devices. Recent development of GaN bulk growth technologies open the way of GaN vertical power devices. This project aims to establish fundamental technologies for GaN vertical power devices. The technologies are categorized to following three groups: (1) development of power-device-quality GaN bulk substrates, (2) development of core device technologies for GaN vertical power devices such as epitaxial growth for low doping concentration, selective doping by ion implantation and GaN MOS process for GaN MOSFET and (3) investigation and modelling of materials properties of GaN such as mobility, deep levels and impact ionization coefficient. In FY2015, good progresses were obtained in reduction of threading dislocations as well as enlargement of diameter in GaN bulk substrates. Demonstration of high channel mobility of 65 cm2/Vs in GaN MOSFET, utilization of AlON gate dielectric for AlGaN HEMTs, electrical characterization of p-type GaN epitaxial layers, and investigation of point defects behavior during annealing process by positron annihilation spectroscopy and photoluminescence spectroscopy were also carried out.
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