成果報告書詳細
管理番号20160000000784
タイトル*平成27年度中間年報 SIP(戦略的イノベーション創造プログラム)/次世代パワーエレクトロニクス 次世代パワーモジュールの応用に関する基盤研究開発 次世代パワーモジュールを使用したパワーエレクトロニクス機器とその統合システムの包括的研究開発
公開日2016/9/7
報告書年度2015 - 2015
委託先名国立大学法人東京工業大学 公立大学法人首都大学東京 国立大学法人大阪大学 国立大学法人千葉大学 国立大学法人名古屋工業大学 国立大学法人横浜国立大学 国立大学法人筑波大学 国立大学法人北海道大学 国立大学法人山口大学 三菱電機株式会社 富士電機株式会社
プロジェクト番号P14029
部署名IoT推進部
和文要約
英文要約Title: Research and Development of Power Electronic Systems Using the Next-Generation Power Semiconductor Modules (FY2014-FY2016) FY2015 Annual Report

This project has been conducted to develop innovative power electronic circuits and systems using the next-generation power modules based on wide-bandgap semiconductors. The research topics and achievements in FY 2015 is as follows:
Experimental evaluations have been conducted in magnetic materials, capacitors, EMI, and filters. The measurement method developed in FY2014 has been utilized to evaluate the power losses under dc-bias and non-uniform flux density conditions. The method has also been applied to evaluation of capacitor loss and to accurate ESR and ESL measurements. The conduction EMI generated from Si PiN and SiC Schottky diodes was compared and it was found that the SiC-SBD has almost no electromagnetic emission associated with reverse recovery current but it induces a higher-frequency noise. Moreover, EMI filters performance was confirmed by using a 1-kW converter, and it coincided well with the calculation results from the method developed in FY 2015.
In the flying capacitor converters, the power devices have been replaced with SiC-MOSFETs having a low on-stat resistance and number of output level has been modified to improve it power efficiency. Unidirectional and bidirectional isolated dc-dc converters have been tested. They exhibited quit a stable operation under unstable input voltage condition and a very high power efficiency of 98%. Effectiveness of soft switching operation has investigated in ac-dc converters using SiC-MOSFETs. 200-kHz high-frequency PWM inverters has been designed and assembled. Application of SiC-MOSFETs to quasi Z-source inverter has investigated. For motor-integrated inverter prototype has been constructed and examined with a 15-kW induction motor.
The developed 380-V hybrid circuit breaker consisting of a vacuum contactor and a Si-IGBT demonstrated successful dc-current cutoff performance under a 300-V and 150-A condition. From the experiments, it was theoretically expected that SiC-MOSFETs makes it possible to shorten the cutoff time and to expand the lifetime of the contactor. The 400-kHz, 2-kW high-frequency inverter developed in FY2015 has been modified to reduce the power losses. It was confirmed that it is possible to heat and detect a small metal part with a diameter of 150 micro meters.
Finally, HVDC transmission systems and STATCOM for distribution systems based on the “modular multilevel cascade converter (MMCC)” topologies have been discussed. The the main part of the MMCC for HVDC has been evaluated in theory, and its design was also completed including main power cells, gate drive circuits, power supplies, capacitor voltage detection circuits. Each power cell will use a power modules consisting of SiC-MOSFETs and SiC-SBDs rated at 3.3 kV and 1.5 kA. On the other hand, the STATCOM will use 3.3-kV 40-A SiC-MOSFETs in its power cells. The detail switching performance have been confirmed in experiments. The control method has also been verified by computer simulation to evaluate its performance in voltage balancing, reactive power control, and negative sequence current compensation.
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