成果報告書詳細
管理番号20160000000797
タイトル*平成27年度中間年報 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト 窒化ガリウムパワーデバイスの実用化促進等に関する先導研究 高品質かつ低コストを実現するスパッタ法を用いた窒化ガリウムエピ成長技術開発の検討
公開日2016/9/7
報告書年度2015 - 2015
委託先名東京エレクトロン株式会社
プロジェクト番号P10022
部署名IoT推進部
和文要約
英文要約Title: Leading Research for Practical Realizations of Gallium Nitride Power Devices / Feasibility Study of Gallium Nitride Epitaxial Growth by Sputtering Method (FY2015-FY2016) FY2015 Annual Report

It is a concern to use MOCVD method to fabricate Gallium Nitride based power devices because during the Gallium Nitride epitaxial growth incorporation of impurities derived from MO sources, such as carbon and hydrogen, is inevitable, and they degrade electrical properties of the devices. Also, its running costs are very high due to high consumption of processing gases and consumable equipment parts. The purpose of this study is to examine the potential of Gallium Nitride epitaxial growth technology by sputtering method to overcome those issues. The following two technical challenges are addressed.

(1) Study of the Manufacturing Technology of Sputtering Target
We study the manufacturing technologies of the high-density, high-purity sputtering target that are necessary to the practical use of the Gallium Nitride epitaxial growth technique by sputtering method. In the fiscal year 2015, we evaluated the manufacturing method proposed in this study and compared the Gallium Nitride materials we fabricated with conventional materials. Also we introduced the experimental equipment which will be used in the trial manufacturing of the sputtering target in the fiscal year 2016.

(2) Search of Sputtering Condition and Study of Sputtering Equipment Specification
We explore the sputtering condition being able to grow good quality epitaxial films and clarify the specifications and functions required for the sputtering equipment.
In the fiscal year 2015, we prepared a Gallium Nitride sputtering target utilizing currently available gallium nitride crystal. And we have been studying the discharge condition of plasma using them.
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