成果報告書詳細
管理番号20160000000799
タイトル*平成27年度中間年報 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト 窒化ガリウムパワーデバイスの実用化促進等に関する先導研究/新規絶縁膜形成技術の探索
公開日2016/9/7
報告書年度2015 - 2015
委託先名国立研究開発法人産業技術総合研究所 国立大学法人名古屋大学
プロジェクト番号P10022
部署名IoT推進部
和文要約
英文要約Title: Development of insulator film deposition technique (FY2015-FY2016) FY2015 Annual Report

GaN power electron devices are promising for high efficiency and compact switched-mode power supply systems. There are, however, several problems such as current collapse or sudden malfunction. In this study, we focus on the analysis and improvement of insulating film or its interface with semiconductor employed in GaN HEMT devices.
First we employed first-principles calculation for analysis of the interface between insulating films and GaN semiconductor. The first-principles calculation was performed using OpenMX(http://www.openmx-square.org/). In lattice constant calculation using OpenMX, we obtained the good agreement between a=0.326 [nm] and c=0.5293[nm] in calculation and a=0.3189 [nm] and c=0.5185 [nm] in experiment (APL 15, 327(1969)). The calculated bandgap 1.842eV is, however smaller than the experimental value 3.39eV, which is due to CGA method. We employed the slab model (PRB 64, 113301 (2001)) and introduced the N-face surface artificially. We found that the surface states in the artificial N-surface can be eliminated by terminating the dangling bond of the N-atoms by a hydrogen atom with 0.75 electron charge. We also found that the surface states in the Ga-face can be eliminated by terminating the dangling bond of 3 out of 4 Ga atoms by hydrogen atom. From these results, we confirmed the OpenMX is effective for the analysis of the insulator-semiconductor interface.
Next, we performed the deposition of insulator films on GaN epi layer grown by MOCVD. We employed PECVD method. We optimized the deposition condition and reduced the plasma damage during the deposition.
We also designed the device structure with MIS gate structure. We deposited the insulator films by IBS and fabricated the device structure.
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