成果報告書詳細
管理番号20160000000822
タイトル*平成27年度中間年報 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト 次世代パワーエレクトロニクス応用システム開発の先導研究 次世代パワーデバイスを用いた発電電動一体ターボチャージャによる排熱回収システムの研究開発
公開日2016/9/7
報告書年度2015 - 2015
委託先名株式会社ACR
プロジェクト番号P10022
部署名IoT推進部
和文要約
英文要約Title: The next-generation power electronics project for realizing a low-carbon society/
Leading research of next-generation power electronics application systems developments/
Research and development to exhaust heat energy recovery system for electric turbocharger
that integrates advanced power devices (FY2015-FY2016) FY2015 Annual Report.

(1)Research and development of SiC 12in1 module (ACR)
Power module developed, bidirectional energy conversion is a low loss, and miniaturized
unit size.Power module, was the two inverters in one module, power SW is 12in1 module.
We have developed a module using 3 types of SiC chip including the reference chip.

(2)The development of the turbo charger motor generator(ACR)
 Output of the generator is set considering fuel saving effect and boost pressure .
The dimension of the magnet is determined through the stress and the objective power output.
After fundamental tests of balancing of the turbine shaft with various combination of parts
of different machining precisions.
The imbalance of the turbine shaft with magnet rotor was corrected sufficiently .
We developed a prototype turbocharger with a generator motor.

(3)Unit development that are integrated bi-directional inverter to the motor generator of
the engine mounting(ACR)

We have developed a unit that integrates the engine mounting motor generator and
bi-directional inverter.
It shows the structure diagram of the image view and this unit of the engine mounted
in this report. Also, showing characteristics of the motor generator. The 20kW, which is
the target value of the energy regeneration can be achieved.

(4)Mounting technology development of next-generation power devices
 (Joint research institutes :AIST)

In order to clarify the origin of the failure of wire bonding, the relationships between
the failure of wire bonding and the condition of wire bonding, the diameter of wire and
the gate oxidation formation method of SiC-MOSFET were investigated. As a result, it is
revealed that the condition of wire bonding and the diameter of wire did not influence
the failure of wire bonding. On the other hand, the gate oxidation method is very effective
for the yield of wire bonding. The dry gate oxidation method decreases the defective
fraction of the wire bonding strongly. Next year, it is planned that power modules will
be produced using the SiC-MOSFETs with dry gate oxides.
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