成果報告書詳細
管理番号20160000000735
タイトル*平成27年度中間年報 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト 次世代パワーエレクトロニクス応用システム開発の先導研究 コンパクト加速器を実現するための超高速・高電圧パルス電源の開発
公開日2016/10/28
報告書年度2015 - 2015
委託先名大学共同利用機関法人高エネルギー加速器研究機構 国立研究開発法人産業技術総合研究所 国立大学法人筑波大学 株式会社パルスパワー技術研究所
プロジェクト番号P10022
部署名IoT推進部
和文要約
英文要約Title: Development of a very fast and high voltage pulse power supply using SiC-DSRD for the compact accelerator (FY2015-2016) FY2015 Annual Report

In 2015, we have carried out: 1)design and simulation of SiC Drift Step Recovery Diode(SiC-DSRD) , 2) development of the fundamental processing technologies of SiC-DSRD, 3) fabrication and testing a pulse power supply using SiC-DSRD, 4) stability evaluation of the pulse power supply using SiC-DSRD.

1) We successfully developed a device-circuit combined simulation technology for SiC-DSRD design and carried out its design, which satisfied both high-speed switching and ultra-high breakdown voltage, simultaneously. Based upon this design, we decided the impurity density and thickness of each epitaxial layer for trial fabrication of the SiC-DSRD.
2) We developed the fundamental processing technologies for 3 device structures (A, B and C structures) of SiC-DSRD. A-structure is the p/n-/n structure. For this structure, the first fabrication of A-structure was conducted, and the blocking voltage= 17.4kV. SiC-DSRDs of A-structure were supplied to PPJ Corporation, and the rise time was measured. The rise time was 5ns at the applied voltage of 6kV. Therefore, the objective for this year has been achieved. The chip size dependence of dV/dt will be investigated. B-structure is p/p-/n one. By using a device simulation, this structure is most suitable for the fast pulse switching. C-structure is fast, but 1000V class SiC-DSRD, which was reported by Russian group. 10 micron mesa etching technology for C-structure was succeeded. B- and C-structures will be fabricated in next year. TO package for 10kV class SiC-DSRD was also developed. The fast pulse test will be performed using this TO package.
3) We also fabricated and tested a pulse power supply using A-structure SiC-DSRD. Two MOS-FETs drivers make the pumping forward current and the shut off reverse current in the SiC-DSRD. In order to make a large output voltage, MOS-FET switch arrays, eight-parallel and four-series configuration of DE-475-102N21As(IXSIS co.), were used. The achieved output pulse characteristics are at 6kV peak voltage, 120A peak current, 1kHz repetition rate, 5ns raise time, 12ns fall time and 10ns pulse width, respectively.
4) The stability of the pulse power supply using SiC-DSRD was evaluated. The 6kV pulse power supply is under tuning, so we evaluated 1kV version. The measured stabilities were as follows, 0.028ns(RMS) timing stability, 0.22%(RMS) amplitude stability. The pulse power supply could operate without any trouble over 100 hours.
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