成果報告書詳細
管理番号20160000000177
タイトル*平成27年度中間年報 「高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/超高効率・低コストIIIーV化合物太陽電池モジュールの研究開発(多接合セル・モジュールの低コスト化技術開発)」
公開日2016/12/20
報告書年度2015 - 2015
委託先名シャープ株式会社
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy, Research and Development of innovative new structure solar cells, Research and Development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules (Cost reduction technologies for multijunction cells and modules) (FY2015-FY2017) FY2015 Annual Report

The purpose of this project is to acquire the prospect for achieving the grid parity (7 JPY/kWh) in 2030 by reducing the production cost of the IMM type compound semiconductor cell and the module using this type of cell and by improving the conversion efficiency of solar cell. There is a wide variety of development items in this project, so this project is separated four groups by category of technology, and we belong to the all groups.
Group I: Development of low cost cell technology
This year we focused to three items from the view of decreasing total thickness of solar cell epitaxial layer will greatly contribute to reduce the cell cost. We evaluated the relationship between thickness of each sub-cell’s base layer and short circuit current (Isc), developed back surface reflecting structure with reducing the thickness of bottom cell and developed new structure of buffer layer. As a result, we have confirmed that the possibility of decreasing the thickness of epitaxial layer by 50% compared to before. FY2016 we are planning to continue the development of reducing epitaxial layer thickness, especially focus to the buffer layer and optical confinement structure under the collaboration with Tokyo University.
Group II: Development of low cost process technology
Our task in this group is to develop the reuse technology of substrate in order to use it for epitaxial re-growth. This year we obtained fundamental data by using several kinds of epi-wafer to clarify the problems of this technology. We evaluated the surface appearance of substrate and epitaxial layer after epitaxial lift off (ELO) process. We obtained the result that cell electrical performance of cell with ELO process is exactly similar as which of conventional process. FY2016 we are planning to develop the elemental technology regarding ELO technology, substrate reuse technology and so on.
Group III: Development of low cost module technology:
This year we designed and fabricated low concentration (1.8times) module and non-concentration module using IMM triple junction cell which is optimized to AM1.5 spectrum. Non-concentration module is under evaluation to measure its electrical performance at National Institute of Advanced Industrial Science and Technology (AIST). Its conversion efficiency is expected over 31%. FY2016 we are planning to implement the field test of both modules at Miyazaki University in order to obtain their electrical performance data under real outdoor condition.
Group IV: Development of high efficiency cell:
This year we evaluated the new structure of top cell. The evaluation was done on LM structure cell and we have confirmed 0.02 - 0.05 V increment of Voc. FY2016 we are planning to apply this technology into the IMM structure cell.
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