成果報告書詳細
管理番号20160000000182
タイトル*平成27年度中間年報 「高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/超高効率・低コストIIIーV化合物太陽電池モジュールの研究開発(低コスト化製膜技術開発)」
公開日2016/12/10
報告書年度2015 - 2015
委託先名大陽日酸株式会社
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy / Research and Development of innovative new structure solar cells / Research and Development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules (Low-cost epitaxy technology) (FY2015-FY2017) FY2015 Annual Report

(1) Research and development of the super high speed hydride vapor phase epitaxy method (H-VPE method) / Taiyo Nippon Sanso Corporation (TNSC) designed and produced H-VPE tool for III-V compound semiconductor solar cell. H-VPE method is super high speed and low cost epitaxy growth. TNSC designed H-VPE that it can grow GaAs and InGaP continually based on the design of the H-VPE tool for Gallium Nitride (GaN) that was produced us before. TNSC completed adjustment before production of this tool and shipment and installed it in National Institute of Advanced Industrial Science and Technology (AIST) in March, 2016. TNSC are going to evaluate the trial run adjustment of this device and epitaxy in FY2016. Furthermore, TNSC will examine the supply method of Al materials and design it and are going to produce it. / (2) Research and development of the high speed metal organic chemical vapor deposition method (MOCVD method) / TNSC performed device technology development to improve use of raw materials efficiency and throughput and developed it for the purpose of acquiring a growth condition optimization guideline, in MOCVD processes such as InGaP, the GaAs to use for a many joining III-V group compound semiconductor cell. TNSC completed adjustment before production of this tool and shipment and installed it in AIST in March, 2016. TNSC are going to evaluate the trial run adjustment of this device and epitaxy in FY2016 Furthermore, TNSC will examine the in-situ cleaning. / (3) Incidental equipments TNSC prepared four cylinder cabinets, two purifiers and two abatement systems for H-VPE and MOCVD. Cylinder cabinets are used to contain seven cylinders (AsH3, PH3, H2S/H2, DEZn/H2, HCl, Cl2, Si2H6/H2) and supply gases to H-VPE and MOCVD. Purifiers are used to supply purified H2 and N2. Abatement systems are used to treat waste gas from H-VPE, MOCVD and cylinder cabinets.
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