成果報告書詳細
管理番号20160000000269
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 CIS太陽電池高性能化技術の研究開発(結晶欠陥の検出と同定、欠陥密度低減化技術開発支援)
公開日2016/12/20
報告書年度2015 - 2015
委託先名国立大学法人筑波大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance CIGS PV module technology (FY2015-FY2017)University of Tsukuba

The goal is to demonstrate high performance CIGS solar cells with the conversion efficiency of more than 22%. To achieve that, detection and identification of defects in CIGS has been carried out by using admittance spectroscopy, photo-capacitance spectroscopy, photoluminescence and its lifetime measurements. The CIGS has been deposited by selenidation method and its properties were compared with those deposited by three stage method. Two kinds of defect level were detected at around 300meV and 800meV from the valence band. The capture cross section and the mean time of electron capture at the defect with the activation energy of around 300meV, detected by admittance spectroscopy, were estimated to be the order of 1E-16cm2 and micro second, respectively. The values are almost the same as those measured for CIGS deposited by the three stage method. The results indicate that the 300meV-defect does not affect significantly the device performan since the minority carrier lifetime of CIGS is reported to be the order of several tens of nano-second. The 800meV defect level was detected by photo-capacitance measurements in CIGS deposited by the selenidation method. The 800meV defect level was detected also in CIGS deposited by the three stage method. From the photoluminescence measurements with two wavelength excitation, the 800meV defect works as recombination center at room temperature. The photo-capacitance signal intensity of the 800meV defect in ICGS deposited by the selenidation method was stronger than those deposited by the three stage method. The device performance prepared by the selenidation method was inferior to those by the three stage method, so the 800meV defect may significantly affect the device performance. Photoluminescence intensity and its lifetime of CIGS deposited by the selenidation are superior to those by the three stage method, although the device performance was inferior to those by three stage method. The luminescence lifetime of cell structure, however, prepared by selenidation method was shorter than that by the three stage method. This result indicates that the interface properties between CIGS and CdS or ZnO may be deteriorated for the case of selenidation cell. It is important to pay attention to the interface properties in a fabrication process for the CIGS prepared by the selenidation method.
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