成果報告書詳細
管理番号20160000000271
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 CIS太陽電池高性能化技術の研究開発(理論計算と実験的手法を組み合わせた粒界と界面を中心とした材料設計とモデル実証研究)
公開日2016/12/10
報告書年度2015 - 2015
委託先名学校法人龍谷大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high-efficiency CIGS solar cells and submodules.(FY2015-FY2017)FY2015 Annual Report

We prepared CuInSe2 and Cu-poor Cu-In-Se (CIS) phases such as CuIn3Se5 and CuIn5Se8 in the composition of (1-x)Cu2Se-(x)In2Se3 with 0.5 ー x ー 1.0. The crystal structure of the sample changed from chalcopyrite-type CuInSe2 to hexagonal CuIn5Se8 through a stannite-type CuIn3Se5 with increasing x. The band-gap energies of Cu-poor Cu-In-Se samples, i.e. CuIn3Se5 (1.17 eV) and CuIn5Se8 (1.22-1.24 eV), are larger than that of chalcopyrite-type CuInSe2 (0.99 eV). The energy levels of the valence band maximums (VBMs) were estimated from the ionization energy by photoemission yield spectroscopy (PYS) measurements. The energy levels of the VBMs of the Cu-poor Cu-In-Se samples decrease dramatically by decreasing the Cu/In ratio. The ionization energy of stannite-type CuIn3Se5 is 0.4 eV larger than that of chalcopyrite-type CuInSe2. The ionization energy of CuIn5Se8 is 0.1-0.3 eV more larger than that of CuIn3Se5. We also studied band structures of CuGaSe2 and CuGa3Se5 and CuGa3(S,Se)5 and Cu(In,Ga)S2 solid solutions.
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