成果報告書詳細
管理番号20160000000288
タイトル*平成27年度中間年報 「高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/超高効率・低コストIIIーV化合物太陽電池モジュールの研究開発(窒化物ハイブリッドセル実装)」
公開日2016/12/14
報告書年度2015 - 2015
委託先名名城大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy/ Research and Development of innovative new structure solar cells / Research and Development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules (Nitride top cell technology) (FY2015-FY2017)FY2015 Annual Report

In this study, we are developing of the nitride-based top cell technology for realization of high efficiency and low-cost solar cell system. In order to achieve this target, realization of InGaN with In content of 40% based top cell and the mechanical stack method is essential. We investigated from the preliminary investigation, because there is a few reports of high In content InGaN solar cells and mechanical stack for nitride semiconductors.
1. Crystal growth of high In content InGaN
We fabricated the thick semi-polar InGaN films on freestanding GaN (10-11) plane substrate by metalorganic vapor phase epitaxy (MOVPE). We also characterized these InGaN films by transmission electron microscope, atomic force microscope (AFM), and X-ray diffraction. The samples were grown by using MOVPE on the freestanding (10-11) substrate. After homoepitaxial growth of approximately 3-μm-thick GaN, We grew thick InGaN samples.
In case of c-plane InGaN samples, the surface morphology of the samples is worse with increasing the In content and thickness in InGaN. In contrast, surface morphology of the semipolar InGaN were relatively smoother with increasing the In content of 30 %. We also characterized the microstructure by transmission electron microscopy of these samples. Significant difference was observed in the behavior of misfit dislocations in the c-plane and the semi-polar plane InGaN. Currently, we are considering the device application of this thick InGaN film.
2. Mechanical stacking for nitride-based semiconductors.
Nitride semiconductor top cell is promising as a top cell of 4 junction cell. In order to realize this device, the establishment of a mechanical stack method is essential. We investigated a comparison of the case of using the direct bonding and an ITO intermediate transparent conductive layer of 3 junction cell and the InGaN cell. We fabricated the 4-junction cell using InGaP/GaAs/Ge solar cells and the InGaN cells. As a result, we confirmed to reduce the device resistance in 4-junction cell by using the ITO intermediate transparent conductive layer.
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