成果報告書詳細
管理番号20160000000291
タイトル*平成27年度中間年報 「高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/超高効率・低コストIIIーV化合物太陽電池モジュールの研究開発(メカニカルスタック)」
公開日2016/12/14
報告書年度2015 - 2015
委託先名国立大学法人東京農工大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title:Development of high performance and reliable PV modules to reduce levelized cost of energy Research and Development of innovative new structure solar cells Research and Development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules (Mechanical stack) (FY2015-FY2017)FY2015 Annual Report

1. We investigated decrease in optical reflection loss at the intermediate adhesive layer using IGZO anti-reflection layer in the case of stacking of GaAs and Si substrates. 130-nm-thick IGZO layers with a resistivity of 0.01 Ωcm were formed on the surfaces of 3-inch GaAs and 4-inch Si substrates by the plasma spattering method. IGZO/GaAs and IGZO/Si substrates were stacked by transparent conductive adhesive fabricated by dispersing 6 wt% 20-μm-sized ITO conductive particles in the epoxy type transparent adhesive jell to make samples with a structure of GaAs/IGZO/adhesive/IGZO/Si. Marked reduction of optical reflectivity was observed at wavelength ranging from 890 to 1040-nm because 130-nm thick IGZO layers effectively reduced the optical reflection at the interfaces among GaAs, Si and adhesive layers. The effective absorption ratio Aeff ranged from 0.91 to 0.95 over the 3-inch sample. This means that the optical reflection loss was reduced ranging from 0.09 to 0.05.
2. We investigated fabrication conditions of transparent conductive adhesive for minimizing the connecting resistivity. 20-μm-sized ITO particles were dispersed in epoxy adhesive. The ITO/epoxy adhesive weight ratio was changed from 2.0 to 7.4 wt%. The gas pressure was also changed from 4x10-5 to 8x10-5 Pa in the step of stacking n-type and p-type silicon substrates. When the gas pressure ranged from 6.0x105 to 8.0x105 Pa and ITO/epoxy adhesive weight ratio ranged from 2.0 to 3.8 wt%, a low connecting resistivity was obtained between 0.68 and 0.75Ωcm2.
3. HVPE growth method is one of a promising approach for preparation of low-cost InGaP at high quality. In this project, thermodynamic analysis of HVPE growth of InGaP ternary alloy was performed in order to obtain optimal growth conditions for InGaP HVPE. It was found that the solid composition and the growth rate of InGaP were strongly influenced by growth conditions such as growth temperature, and input partial pressures of the group III and V precursors. Thermodynamic analysis can be a useful tool to obtain important information about designing the HVPE system and growing InGaP ternary alloy which will be required.
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