成果報告書詳細
管理番号20160000000292
タイトル*平成27年度中間年報 「高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/超高効率・低コストIIIーV化合物太陽電池モジュールの研究開発(高効率・低コストIIIーV/Siタンデム)」
公開日2016/12/20
報告書年度2015 - 2015
委託先名豊田工業大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy. Research and Development of innovative new structure solar cells. Research and Development of ultra-high efficiency and low-cost III-V compound semiconductor solar cell modules (High efficiency and low cost III-V/Si tandem) (FY2015-FY2017) FY2015 Annual Report

1. Low-cost III-V cell on Si: III-V on Si cells were investigated by the scale of external radiative efficiency and dislocation density. Both the target of the quality of epitaxial film and area of researches were defined accordingly. The cell process including low-resistance electrode technology was developed for realization of high efficiency cells using above epitaxial growth research.: Device structure for the Si bottom cell was investigated. Several new structures were proposed and simulated. One of them was micro-crystalline Si protection layer and super-thin dielectric layer for protection of Ar plasma damage and selective carrier collection. Another structure was inverted n-based Si structure to keep flatness on the gluing surface of the bottom cell.: We performed XTEM observations of GaAs/Si junctions fabricated by the surface-activated bonding. No symptoms of dislocations were observed at bonding interfaces.: 2. Heteroepitaxial growth of III-V materials on Si: Lateral growth GaAs from area selective GaAs on Si can reduce dislocation density. We successfully grew area selective GaAs films on apertural area of SiO2 masked Si substrate by both of ALE and CBE. We also investigated Ge growth as buffer layer to improve GaAs quality. We found the activation energy for CVD growth of Ge using t-C4H9GeH3 source were different between Si and SiO2 substrate. This result suggests the potential for area selective Ge growth.: 3. Low-cost module: For demonstration of possibility of substantial improvement of tolerance, a 30 minutes intermittent tracking was examined. A 100 x refractive and dielectric concentrator was designed. It had about plus or minus 5 degree of acceptance angle. A Monte Carlo simulation showed this advanced optics had sufficient assembles tolerance. A feed-forward control with a linear error correction was investigated. With these combinations, it was shown that 30 minutes intermittent tracking is possible even in as high as 100 x concentration.: One of the most direct and efficient ways in eliminating greenhouse gas emission from cars is to install a PV panel on the roof. Our choice was a static concentrator customized to automobile. Special static concentrator that collects sunlight from shallow incident angle was successfully developed.: 4. CBE grown GaInNAs cell and defect study: To improve film quality of CBE grown GaInNAs, we used GaAs(111) vicinal substrate. PL results show the potential for improving film quality of GaAsN by using GaAs(111)B 2o off substrate. We found good correlation between DLTS and FTIR peaks related N-H defects which act as acceptors.: We used model consist in a GaAs super-cell containing 128 atoms for determing electronic structure and atability of GaAsN defects. We obtain Eg=1,54eV which is in excellent agreement with experiment (1.52eV).
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