成果報告書詳細
管理番号20170000000080
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 先端複合技術型シリコン太陽電池、高性能CIS太陽電池の技術開発 赤外線FZ法による高品質低コストシリコン単結晶の開発
公開日2017/3/31
報告書年度2015 - 2015
委託先名株式会社クリスタルシステム
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy, technological development of advanced composite silicon solar cells and high-performance CIS solar cells, development of high quality and low cost single silicon crystals by the infra-red optical floating zone furnace. FY2015 Annual Report.

Current results:
(a)Development of the infra-red(IR) heating type optical floating zone furnace for Si single crystal growth.
(a-1) Development of IR distribution controller.
An IR distribution controller has been developed to keep the optimized hot-zone for stable crystal growth.
(a-2) Development of a system to measure the melt angle at meniscus
A measuring system of melt angle at meniscus has been developed which enable to keep a constant angle cone-shape during the growth.
(a-3) Development the melt volume controller
The melt volume controller has been developed using the melt angle measuring system at meniscus (a-2), and applied to adjust the suitable volume for the stable growth.
(a-4) Improvement of the infra-red optical floating zone furnace
i)A supporting system of the heavy crystal grown on a small diameter necked crystal has been developed to keep the stable growth of dislocation free crystals.
ii)An adjusting system of feed rod position has been developed to keep always at just center of the rotating shaft to achieve the stable growth.

(b) Development of the FZ growth condition by the infra-red furnace
(b-1) Growth conditions of high quality Si single crystals.
i) A 130mm diameter with 80mm length Si single crystal has been grown with successfully.
ii) Target of minority carrier lifetime (2000 micro sec) was attained (2105 micro sec).
iii) N-type crystals of 89-102 ohm cm were successfully grown (targeted center value is 100 ohm cm) using a feed rod attached P-doped crystalline chips.
iv) The resistivity variation of the above crystal was 12.7% towards ingot length (target <= 15%), and 6.6% in radial direction (target <=12%)
v) A dislocation free crystal up to 55mm diameter has been made by normal necking technique. Without necking technique, dislocation density in the grown crystal of 130mm diameter was 1x107-1x108/cm2.
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