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成果報告書詳細
管理番号20160000000851
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発/革新的新構造太陽電池の研究開発/ペロブスカイト系革新的低製造コスト太陽電池の研究開発(新素材と新構造による高性能化技術の開発)
公開日2017/4/15
報告書年度2015 - 2015
委託先名国立大学法人東京大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy / Research and development of innovative new structure solar cells / Development of perovskite-type innovative solar cells with low production cost (Technologies for higher performances based on new materials and new structures) (FY2015-FY2017) FY2015 Annual Report

Following investigations have been performed to achieve power conversion efficiency (PCE) higher than 20%, and the cells exhibiting 20.1% (single cell) or 21.5% (tandem cell) were obtained during this FY. In The Univ. of Tokyo, the origin of "hysteresis" in perovskite solar cells (PSCs) was rationalized with a double-capacitor model. Based on the maximum power point tracking analysis, the observed PCE (18%) was confirmed as not an over-estimated value. Reproducible preparation of perovskite layers by vapor deposition process has been optimized. Vapor deposition afforded stable formamidinium-based perovskite at room temperature. Devices using original carbon materials with 9% PCE were prepared. Low-temperature production conditions were investigated to achieve 15-16% efficiency with voltage over 1 V. The cell using SnO2 exhibited high durability, more than 1 month, under ambient atmosphere without encapsulation. A spectral-splitting tandem solar cell using a PSC and a wideband dye-sensitized solar cell was prepared to show 21.5% efficiency. In AIST, interface engineering to reduce the energy loss at the material interfaces in the PSCs was performed. For the interface between ETL and perovskite, the conduction band edge potential of the compact TiO2 layer was found to be adjusted by the TiCl4 treatment. The interface modification using fullerene derivatives afforded PCE 13.9%. To modify the interface between perovskite and HTL, several pyridine derivatives were vapor deposited or spin coated to show increased Voc and PCE. By the use of laser deposition methods, an inverted structure PSC with PCE 16% was obtained. In Kyushu Institute of Technology, Sn/Pb mixed perovskites with broad absorption were applied for PSCs to achieve Jsc 28mA/cm2, which is higher than the highest value in MAPbI3-based cells. In Tokyo Tech., it was found that Cl is deposited at the perovskite/TiO2 interface, and the facet dominates the concentration due to the interaction with the less-coordinated Ti on the surface. TiO2 nanoparticles exposing less-stable facet were systematically prepared for the scaffold material in PSCs to show higher photo-current and voltage. Microwave annealing successfully converted the deposited precursor films to the perovskite films at lower temperature and shorter times, and the film quality was better than those heated on a hot plate. In Univ. of Hyogo, NiO was applied for HTL in PSCs. After the optimization of basic cell fabrication conditions without NiO, improvements in cell performances were confirmed by the use of NiO. In Kyoto Univ., high-purity perovskite precursor, MAPbI3-DMF, was obtained as needle-like crystals. By the use of this precursor material, dense and flat perovskite layer was formed to afford 20.1% PCE in the cell. In Kumamoto Univ., electronic structure of conventional perovskite layer, effect of element substitution, and effect of hybrid structure with graphene were considered on the basis of theoretical calculations.
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