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成果報告書詳細
管理番号20160000000773
タイトル*平成27年度中間年報 クリーンデバイス社会実装推進事業 省エネ社会を支えるユビキタス給電インフラを実現する窒化物半導体小型電源モジュール
公開日2017/6/15
報告書年度2015 - 2015
委託先名日本電信電話株式会社 国立大学法人東京大学 新電元工業株式会社
プロジェクト番号P14016
部署名IoT推進部
和文要約
英文要約Title: Clean Device Promotion Project: “Power-supply modules consisting of GaN-based power transistors for an energy-saving society”, (FY2015-FY2016) FY2015 Annual Report

1) Activities for standardizing GaN power transistors
We extracted measurement conditions for evaluating electrical characteristics of GaN power transistors and made a table of device parameters for comparison with Si-based power transistors. In addition, in several meetings with a domestic GaN power transistor manufacturer, we discussed technical and business issues and a policy for standardizing the GaN device specifications, estimation procedures, and so on. We are going to cooperate with the manufacturer to provide feedback regarding evaluation data and the requirements on power supplies for achieving the project’s purpose.
2) Activities for disseminating GaN power transistors
Discussions with knowledgeable persons provided us with a basic understanding of the GaN transistor market. GaN transistors can be operated at high speed, which is an advantage in down-sizing of modules. From this standpoint, GaN transistors have a potential market in lighting equipment for the home and in AC adaptors for personal computers. It is important to search for new potential markets in which down-sizing of equipment is strongly required.
3) Activities on reliability and safety of GaN power modules and transistors
We extracted reliability and safety criteria from environments in which Si-based conventional HVDC power supply units are actually used. We also extracted device parameters and their measurement conditions for GaN power transistors. These results are summarized in a table and compared with those of Si-based power transistors.
4) Fabrication of DC/DC power modules with GaN transistors
Using GaN power transistors instead of Si-based power transistors could reduce the volume and mass of DC/DC power modules for HVDC power-supply units (5 kW) as much as 33% compared with conventional power modules. We fabricated the drive circuit and main circuit for high-frequency switching using GaN power transistors. Experiments confirmed wave forms at 600 kHz. We also found some problems that need to be solved.
5) Fabrication of a wireless power transmission (WPT) unit with a GaN transistor.
We fabricated a WPT unit with GaN transistors and successfully demonstrated 3-W power transmission between two coils. From this fabrication, we found that there are some problems that arise because of the properties of high-speed GaN transistors. It is very important for device manufacturers to inform device users about these problems and how to solve them.
6) Validation of energy-saving effects by GaN power transistors
We investigate the energy–saving effects and reduction of greenhouse gas (GHG) emissions by GaN power transistors in various products for use in telecommunications buildings, data centers, automobiles (e.g. HEV, EV, etc.), and equipment related to smart grid (e.g. power conditioners for PVs), d) WPT systems. This fiscal year, data were collected for setting the “baseline” for each product and the in-use potentials of GaN power transistors in the future.
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