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成果報告書詳細
管理番号20170000000091
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発(先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発)
公開日2017/6/2
報告書年度2015 - 2015
委託先名豊田工業大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy / Technological development of common platform for solar cells and modules/Research and development of common platform for silicon solar cell processes based on advanced multiple technologies (FY2015-FY2017) FY2015 Annual Report

We have been developing p-type PERC solar cell as the mainstream of next generation of crystalline Si solar cell in collaboration with Komatsu NTC Ltd, MITSUBOSHI DIAMOND CO., LTD, and NORITAKE CO., LIMITED. We fabricated 156 mm quasi-square 100 um thick ultra-thin p-type PERC solar cells and achieved 19.2% cell efficiency. This value was almost equal to the efficiency of 200 um thick PERC cell (19.3%). Therefore, we were able to confirm the feasibility of 100 um thick ultra-thin p-type PERC cell to realize high efficiency and low cost. On the other hand, we have been also developing n-type bifacial cell in collaboration with NAMICS CORPORATION. Because the newly developed Ag paste doesn’t contain Al, it doesn’t induce Ag/Al spikes. Nevertheless, it can contact boron emitter with low contact resistance and realize high efficiency. Additionally, low-temperature curing Cu paste has been also developed and applied to both front and rear busbars. As a result, the cell efficiency of our n-type bifacial solar cell composed of Ag fingers and Cu busbars has achieved 20.8%. This result clearly proved that the technical feasibility of n-type high-efficiency low-cost bifacial solar cell. Furthermore, for further improvement of these solar cells, we have been investigating high quality surface passivation technique, and developed AlOx/SiNx:H stacked passivation for p-type silicon surfaces. The AlOx/SiNx:H stacked passivation showed much higher passivation performance and stability under light illumination compared to commonly used SiO2/SiNx:H passivation for p-type silicon surfaces. In addition, the passivation quality of AlOx/SiNx:H stacks was largely increased under light illumination owing to the enhanced field-effect passivation, and was permanently enhanced even after light illumination. This is quite beneficial from the viewpoint of solar cell operation. A new hetero-back contact architecture was proposed and numerically demonstrated to solve the efficiency degradation due to the recombination loss at the gap region. A charged-insulator with a high fixed-charge density capping over the i-aSi:H on the gap fully recovers efficiency even with a low-quality surface at the gap. This approach could be adoptable for any passivated contacted cells with all back contact. We have also started to develop a new passivated contact cell with a tunneling oxide. The design guideline towards high efficiency was numerically investigated to understand the optimal oxide thickness and workfunction at the electrode/oxide interface. New electrode materials such as remote-plasma-deposited MoOx have been under investigated to experimentally demonstrate the above our concept. A new advanced Kelvin force microscopy system has been developed to directly measure the workfunction profile across the contact under the light illumination. This system will provide device physics in detail, contributing to an improvement in the modeling and the fabrication processes of the contact.
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