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成果報告書詳細
管理番号20170000000092
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発(材料・プロセス評価基盤技術に関する研究開発)
公開日2017/6/2
報告書年度2015 - 2015
委託先名学校法人明治大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title:Development of high performance and reliable PV modules to reduce levelized cost of energy/Development of common components for solar cells and modules/Research and development of common platform for silicon solar cell processes based on advanced multiple technologies(Research and development of fundamental evaluation technology for silicon solar cell materials and processes)(FY2015-FY2017) FY2015 Annual Report

In collaboration with Komatsu NTC, we discovered occasional degradation in quantum efficiency for UV light in wafers sliced by fixed abrasive sawing. We succeeded at visualizing the edge-shaped degradation region using PL imaging method.
To examine the compatibility between wafer and cell fabrication process, we performed N-type bifacial solar cell fabrication trial in collaboration with Tokuyama Corporation. As a result, we have found that there are clear correlations between the concentration of substitutional carbon (Cs), growth conditions of ingot and Voc. Additionally, this result indicates that we are able to improve cell performance by the optimization of these parameters, that is, Cs, growth conditions and wafer resistivity as well as oxygen concetration. We investigate the mechanism of the cell performance degradation due to the oxygen precipitation by the influence of Cs and growth conditions. In the near future, we will also investigate P-type PERC and hetero-junction solar cell, and then establish the guideline for high efficiency.
To achieve this, we demonstrated the detection of extremely low level of carbon in the concentration range of 1014-1015 cm-3 by luminescence activation using electron irradiation. For a Si crystal containing carbon with the concentration of 3.1×1015 cm-3, which is on the order lower than the detection limit of the conventional FT-IR method, C-line and G-line originating from carbon are clearly detected in the PL spectrum. We are planning to perform carbon quantification based on a nearly linear relationship between these line intensities and the carbon concentration.
We performed low-temperature photoluminescence (PL) analysis to quantify high concentrations of donor and acceptor impurities remaining in low-cost solar-grade Si material and those in junction and contact area with the intention of improving the quality of Si solar cells. We found and identified a broad PL band associated with the impurity cluster bound exciton (ICBE). A very good correlation was obtained between the peak shift of the band and the total concentration of P and B impurities in Si crystals. This universal relationship suggests an effective method for determining impurity concentrations.
We have successfully detected PL lines due to the thermal donors and the new donors in multicrystalline Si. Since these donors are early stages of oxygen precipitates, the analysis of these PL lines leads to better understanding of the oxygen precipitation process responsible for the degradation of minority carrier lifetime.
We performed series of experiments to investigate interaction between grown-in defects and metal contaminant in silicon wafer utilizing PL imaging method. As a result, we found that wafer conduction type (p- or n-type) differentiated deteriorating impact depending on the metal species and additionally effectiveness of P-gettering from contaminated defects.
We performed extra plasma treatment after SiNx deposition to improve surface passivation. At the SiNx/Si interface after plasma treatment, we found out reconstruction of chemical bond utilizing XPS and XRR, and partly attributed chemical states of oxygen and nitrogen atoms to contribution to improve the surface passivation.
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