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成果報告書詳細
管理番号20170000000095
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発(アモルファス・結晶界面における構造及び電気的特性に関する研究)
公開日2017/6/2
報告書年度2015 - 2015
委託先名国立大学法人東京工業大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy/ Development of common components for solar cells and modules/Research on silicon solar cell process based on advanced combined technologies (Research on the structure and electrical properties of the interface between hydrogenated amorphous silicon based material and crystalline silicon) (FY2015-2017) FY2015 Annual Report, Tokyo Institute of Technology

(1)Detailed analysis of hydrogenated amorphous silicon (a-Si:H) based material/crystalline silicon (c-Si) hetero-interface:
The interface between hydrogenated amorphous silicon oxide (a-Si1-xOx:H) and c-Si was investigated by using temperature-dependent QSSPC measurements. The temperature dependence of the effective carrier lifetime was significantly influenced by interface properties. The effective carrier lifetime increased with the measurement temperature until a certain temperature. Further increase in the measurement temperature resulted in the decrease in the effective carrier lifetime. Our numerical simulation revealed that this change in the temperature dependence is mainly caused by the difference of the valence band offset between a-Si1-xOx:H and c-Si. These results indicate that the temperature dependent QSSPC measurement is useful tool to investigate the a-Si:H based materials/c-Si interface.

(2)Development of low damage deposition technique for metal oxide based emitter
Metal oxides are promising materials for the emitter layer of silicon heterojunction (SHJ) solar cells. The application of molybdenum oxide to SHJ solar cells has been reported. The molybdenum oxide layer was deposited by thermal evaporation; however, it is important to use industrially feasible deposition technique for mass production. Therefore, we investigate the metal oxide based emitter by using low damage sputtering method. A low damage sputtering deposition system was installed at the end of this fiscal year. Before the installation of the deposition system, we investigated the properties of p-type low resistivity cuprous oxide (Cu2O) thin film deposited by radio-frequency (RF) sputtering. The Cu2O is one of the promising candidates for the emitter layer of SHJ solar cells. Nitrogen doping during the sputtering significantly reduced the film resistivity. The analysis of Cu2O (p)/c-Si (n) heterojunction revealed that the balance band offset between Cu2O and c-Si is enough small compared with that between a-Si:H and c-Si. In addition, Cu2O (p)/c-Si (n) heterojunction diode shows good rectifying characteristics.
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