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成果報告書詳細
管理番号20170000000096
タイトル*平成27年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発(低コスト・拡散系太陽電池におけるキャリア再結合に関する研究)
公開日2017/6/2
報告書年度2015 - 2015
委託先名公立大学法人兵庫県立大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title : Development of technology of power generation cost reduction for high-performance and high-reliability solar power generation / Development of common technology platform for solar cells and modules / Research and development of common technology platform for process of advanced composite silicon solar cells / Study on carrier recombination in low-cost and diffusion based solar cells (FY2015-FY2017) FY2015 Annual Report

(1) Development of high-performance passivation films
With decreasing the thickness of crystalline silicon substrates, technology for suppression of recombination current at front and rear surface becomes more important. Therefore, development of high-performance passivation films has been desired. As the novel passivation material for n-type silicon, we selected yttrium oxide. As the deposition technique, a mist chemical vapor deposition (mistCVD) was used. In case of mistCVD, solution of yttrium ions must be prepared. We tried some source materials, and selected yttrium acetylacetonate. YOx films were deposited at various temperature, and evaluated their passivation properties. As a result, maximum surface recombination velocities of the samples deposited at 350 ~ 450 C were almost the same at 100 cm/s, but that of the sample deposited at 500 C was 3000 cm/s. In order to clarify the difference, the interface trap density and effective fixed charge density were evaluated. The result was inconsistent with the results of maximum surface recombination velocities. Therefore, we evaluated metal contamination, and the iron concentration in the sample deposited at 500 C was high one order of magnitude more than those in the samples deposited at 350 ~ 450 C.

(2) Establishment of characterization technology for interfacial trap density and fixed charge density in passivation films
In order to suppress the recombination current at the interface, passivation technology is essential. There are two types of passivation one is a chemical passivation which reduces the defect at interface, and the other is a field effect passivation which reduces minority carriers at the interface. Their performance were indicated by the interface trap density and the effective fixed charge density, respectively. We carried out the evaluation of the interface trap density and the effective fixed charge density by means of capacity-voltage measurements with simulation technology.

(3) Development of pn-junction formation technology
We carried out the numerical simulation to understand the relationship between dopant concentration profile and solar cell efficiency. In the case of complementary error function type profile, the efficiency was increased with decreasing surface concentration and with increasing sheet resistance. In the case of Gauss type profile, the efficiency was increased with decreasing surface concentration when the sheet resistance was relatively high.
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