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成果報告書詳細
管理番号20170000000235
タイトル*平成28年度中間年報 低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト 新世代Siパワーデバイス技術開発/新世代SiーIGBTと応用基本技術の研究開発
公開日2017/6/7
報告書年度2016 - 2016
委託先名国立大学法人東京大学 国立大学法人東京工業大学
プロジェクト番号P10022
部署名IoT推進部
和文要約
英文要約Title:Research project for new generation Si power device technology development. Research and development of new generation Si-IGBT and the applied basic technique. (FY2014-FY2019) FY2016 Annual report.

The purpose of this project is to establish a new generation Si-IGBT technology. The new generation Si-IGBT and related technologies, whose performances are equal to or better than those of the present SiC power devices in terms of breakdown voltages and current density, will be developed by taking full advantage of advanced carrier injection enhancement effects and applied circuit technologies. This project will greatly contribute to strengthening industrial competitiveness of Japanese semiconductor industries and power electronics industries.
This year, by integrating the fabrication processes of high breakdown voltage pin diodes and high current density vertical diodes which were developed until last year, we developed the integrated fabrication process of 1kV grade large area IGBTs with collector current over 5A. The collector current of 5A at Vce=1.7V and breakdown voltage over 1kV were confirmed in fabricated IGBTs.
Evaluation of carrier lifetime from on-currents of multiple diodes was developed, in which ratios of current of a single diode and that of parallel diodes depending on neighboring diode spacing was used. By using this method, it was shown that high temperature condition resulted in reduction of carrier lifetime significantly, and therefore low-temperature and longtime conditions were desirable to keep long lifetime. Lifetime values much longer than 10μs were confirmed after proper thermal processes, so that it is expected that lifetime longer than 10μs in IGBTs fabricated through these processes is realized.
For the characterization of wafers and process, we have continued to evaluate the influence of the device fabrication process on carrier lifetime in the wafers. We have shown that the long life time Si wafers can be produced by the total thermal budget control of CZ process even though the slightly high C concentration.
From the device simulation, the requirements for the life time values have confirmed as more than 10μs for 1kV grade and more than 100μs for 3kV grade IGBTs.
In order to make full use of the new generation Si-IGBT, the countermeasures for noise are very important. Therefore, we had to develop new gate drive and circuit technologies suitable for the new generation Si-IGBT. At first, we designed the circuits preventing the influence of noise, and fabricated circuit modules. Then, we designed and fabricated the newly developed gate drive circuits with the function of gate signal control. It was confirmed that we achieved a balance between noise and power loss reduction according to doing experiments in actual power electronics circuits. Finally, we demonstrated continuous switching tests for the fabricated IGBT modules which were assembled with control circuits and gate drive circuits.
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