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成果報告書詳細
管理番号20170000000515
タイトル*平成28年度中間年報 IoT技術開発加速のためのオープンイノベーション推進事業/IoT技術開発加速のための設計・製造基盤開発
公開日2017/7/6
報告書年度2016 - 2016
委託先名国立研究開発法人産業技術総合研究所
プロジェクト番号P16008
部署名IoT推進部
和文要約
英文要約Open-innovation project for IoT technology development
Design and manufacturing equipment to develop IoT devices are installed in the existing common use platform of the National Institute of Advanced Industrial Science and Technology (AIST). Five projects were performed in this fiscal year for establishing the platform as followings:
1) Open-innovation project for IoT technology development
Some tasks were done for introducing new equipment in Super clean room (SCR) and Nano-Processing Facility (NPF) of AIST: (1) preparing specification documents of new equipment, (2) ordering the equipment, (3) relocation of existing equipment, and (4) a part of utility work. As a result, equipment of 11 numbers was contracted with their vendor.
2) Physics-based IoT device-design platform for new material / principle devices
We have a new original semiconductor device simulator in AIST for physics-based device design of coming new material / principle devices. It has an automatic differentiation module enabling the fast implementation of new physical models, and a domain decomposition module enabling high performance computing using distributed computer clusters. During this fiscal year, several user interface modules for the device simulator are designed, and their coding has been started. Next year, these modules will be integrated with new modules to realize a unified user interface of the IoT device-design platform.
3) Development of new material thin film growth for low-power IoT devices
We have worked on relocation of ASM Epsilon 2000 epitaxial growth machine. The wafer size of Epsion 2000 includes 4 inch for an epitaxial growth of SiGeSn on the Ge substrate. Also, we have worked on remodeling of automatic wafer cleaning machine to transfer and clean 4 inch wafers. We have experimentally confirmed cleanness of automatically cleaned 4 inch Si and Ge wafers and an experimental procedure using 4 inch wafer is updated.
4) Development of high reliability fine TSV process for small and low power consumption IoT device
A utility connection was performed for new gas line additional introduction to plasma dry etching equipment in this fiscal year. Additionally, an attachment corresponding to 300mm silicon wafer was introduced in copper electroplating system.
5) Development of standard Si-photonics process design kits (PDKs)
Through the evaluation of silicon photonics devices preliminary fabricated, a temporary PDK for fabricating optical waveguides and modulators has been established. This PDK would provide us the finest performance devices in the world. In order to improve reliability of the PDK, fabrication of specially-designed devices is now being carried out. Moreover, we have fixed the specifications of Ge film deposition equipment to be installed next fiscal year. Preliminary development of Ge deposition, which would accelerate the next year’s activity, is now also being carried out.
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