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成果報告書詳細
管理番号20170000000579
タイトル*平成28年度中間年報 エネルギー・環境新技術先導プログラム 量産型コンパクト超電導磁気エネルギー貯蔵デバイスの研究開発
公開日2017/7/6
報告書年度2016 - 2016
委託先名国立大学法人名古屋大学 学校法人トヨタ学園豊田工業大学 学校法人関東学院関東学院大学
プロジェクト番号P14004
部署名イノベーション推進部
和文要約
英文要約 In this project, the proposal of our compact SMES realized by a NbN transversal spiral thin film coil in a spiral trench engraved on a Si wafer in the former project is to be brought onto the next stage. By changing the superconductive materials from NbN to YBCO, operation temperature is increased from that below 15 K to that over 20K, that is, liquid hydrogen temperature, or even over 77K, that is, liquid nitrogen temperature. Then the SMES can be operated without cryogenic refrigerator or liquid helium, leading to the popularization of the proposed SMES in varieties of applications thanks to its nature of compatibility of mass-production based on well-established MEMS and semiconductor processes. YBCO also gives two orders of magnitude higher energy storage density than NbN.
As for the spiral trench fabrication in Toyota Institute of Technology, the recipe of fabrication of the transversal three-storied spiral trench was revised to reduce the 1 cycle etching depth to around 210nm which gives the benefit of reduction of scallop-like protrusions on the trench wall which causes voids in superconducting films. The formation of the stabilization layer on the NbN thin film spiral coil has been done by Cu plating after formation of seeding layer with PdCl2 at pH=2 resulting in sufficient adhesivity in Kanto-Gakuin University (KGU). This is not applicable in the case of YBCO because YBCO can corrode at pH=2. Now test plating by using Ni-Cu-P plating in place of Cu plating has been tested on YBCO sintered disks of 15mm in diameter formed by Nagoya University changing composition of Ni-Cu-P so as to Ni does not give clear magnetism which can interfere superconductivity of YBCO and so as to result in sufficient adhesivity. Sputter deposited YBCO films on Si wafers without any orientation have also been fabricated by Nagoya University and sent to KGU for test plating.
To realize thick YBCO film with preferred orientation on Si wafer, insertion of two sputter-deposited buffer layers: CeO2 thin film /YSZ thin film with preferred orientations are indispensable. To realize these preferred orientations, the substrate temperature up to 800 ーC is requested. To attain this, the substrate heating system was changed realizing the substrate temperature of 580 degree of centigrade in comparison with previous 150 degree of centigrade . In parallel with this, experimental conditions to form YBCO films by metal organic deposition(MOD) method were surveyed and preferable conditions to form YBCO films of preferred orientation on SrTiO3 single crystal substrate was found. After preferred orientations of sputter-deposited YBCO, CeO2, and YSZ films are realized, YBCO films by MOD are to be fabricated on the sputter-deposited YBCO film of preferred orientation in the preferable conditions of MOD obtained above.
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