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成果報告書詳細
管理番号20170000000741
タイトル*平成28年度中間年報 高性能・高信頼性太陽光発電の発電コスト低減技術開発 太陽電池セル、モジュールの共通基盤技術開発 先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発(先端複合技術シリコン太陽電池プロセス共通基盤に関する研究開発)
公開日2017/8/29
報告書年度2016 - 2016
委託先名豊田工業大学
プロジェクト番号P15003
部署名新エネルギー部
和文要約
英文要約Title: Development of high performance and reliable PV modules to reduce levelized cost of energy/Technological development of common platform for solar cells and modules/Research and development of common platform for silicon solar cell processes based on advanced multiple technologies(FY2015-FY2017) FY2016 Annual Report

In collaboration with Komatsu NTC Ltd, and NAMICS CORPORATION, we promoted development of ultrathin P type monocrystalline bifacial PERT (Passivated Emitter and Rear Totally Diffused) cell with the aim of realizing 14 yen/kWh. A 156 mm square 88um thick ultrathin P type monocrystalline bifacial PERT cell achieved cell efficiency of 16.6% in front side and 15.6% in back side. Additionally, in order to improve the quality of boron emitter of N-type bifacial cell, simple (non mass separation) type ion implantation method which was being studied from previous NEDO projec was applied. By investigating and improving the problem in simple ion implantation from a crystallographic point of view, we confirmed the effect of improving the efficiency of APCVD boron by 0.3%.Furthermore, for further improvement of these solar cells, we have developed versatile Mg-doped AlOx surface passivation which has controllable field-effect passivation with excellent chemical passivation. Mg-doped AlOx passivation layers can provide both negative and positive fixed charge density in the order of 10^12 cm-2. In addition, negative fixed charge density in the order of 10^11 cm-2 can also be achieved, i.e. zero field-effect passivation, which is required for the simultaneous passivation of both highly doped p- and n-type silicon surfaces, can be achieved while maintaining very low interface defect density less than 1.5×10^11 cm-2eV-1. Therefore, newly developed Mg-doped AlOx passivation is much beneficial to a low-temperature single-scheme passivation for the fabrication of cost-effective high-efficiency silicon solar cells.We also proceeded the demonstration experiment for development of the next generation career selective contact cell. In addition to utilizing the cell prototype platform of Toyota Institute of Technology, we have developed contact film deposition, physical property evaluation and cell structure test device using reactive plasma deposition (RPD) which is a low damage process (installed in previous NEDO project). Based on the investigation of the film formation method and conditions of MoOx, a test element for evaluating open-circuit voltage of ITO/MoOx laminated contact structure was prepared. The work function of MoOx was extracted by CV analysis of the test device with MOS structure and Voc was obtained by I-V measurement of the cell structure test device. Currently values up to about 600 mV are available. Regarding the evaluation of junction characteristics and process evaluation of these CSC cells, evaluation experiments using a novel probe microscope system, which has been in progress since last fiscal year, were advanced. At the beginning, we succeeded in measuring the work function change depending on the presence or absence of light irradiation on the p/n region of Si, using a device with a relatively simple structure.
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