FLOSFIA INC.
As of February 2024
City | Year of Establishment | Founder |
---|---|---|
Kyoto City | 2011 | Toshimi Hitora |
Partner VC | Latest round of Fundraising | Valuation |
---|---|---|
- | Series E | JPY14,500 million |
- Contact Information : 075-963-5202
- info@flosfia.com
- Website : FLOSFIA INC.
Program name
Deep-Tech Startups Support Program
Research theme
Demonstration of low-cost mass production of high-performance α-Ga2O3 power semiconductors
Business Plan
We will develop high-functionality and low-cost technology for power semiconductor devices using α-Ga2O3 (corundum-structured gallium oxide), a new material that demonstrates excellent performance specifically for power semiconductor applications, and by establishing mass production technology that achieves both high functionality and low cost and implementing it in society, we aim to reduce power conversion loss in a wide range of application fields, including electric vehicles, robots, power supplies, and inverters, and expand the market.
Research Outline
This R&D project will develop high-functionality and low-cost technology for power semiconductor devices using a new material α-Ga2O3, and solve issues through optimization of device structure and process, reliability evaluation, and customer feedback. By achieving the development items listed below, we aim to clear the important levels of "high functionality" and "low cost".
(1)Small chip size device design and development
(2)Low-cost process design and development
(3)Larger wafer diameter
(4)Chip miniaturization
(5)Ensuring reliability
Phase | Business Area/Field | Research Period | Research Grant Amount |
---|---|---|---|
DMP | Materialsl | 2023~2025FY | JPY 300 million |
Last Updated : June 6, 2024