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Self-Healing Phenomenon of Bonding Materials for Use with SiC Power Semiconductors Discovered
-Promoting Applications in the Automotive Sector through Improvements to Long-Term Reliability Improvements-

March 28, 2016
New Energy and Industrial Technology Development Organization (NEDO)

As part of a NEDO project, Osaka University and DENSO Corporation discovered a self-healing phenomenon of bonding materials that can be used to improve the long-term reliability of SiC (silicon carbide) power semiconductors.

Researchers discovered that cracks on bonding materials were self-repaired in equipment operating in high-temperature environments. As a result of this discovery, the applicability of SiC power semiconductors in the automotive sector and similar industries has been greatly enhanced.

Photo; The appearance of a crack undergoing the self-repair process (left: before repair, right: after repair)
The appearance of a crack undergoing the self-repair process
(left: before repair, right: after repair)

For more information, please contact:

NEDO Electronics, Materials Technology and Nanotechnology Department
Contact Persons: Mase, Sugiyama
Tel: +81-44-520-5211­