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6.5kV Full-SiC Power Semiconductor Module Developed
– Will allow for smaller and more energy-efficient power electronics equipment in railcars and power systems –

January 31, 2018
New Energy and Industrial Technology Development Organization (NEDO)

As part of a NEDO project, Mitsubishi Electric Corp. has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module, which has 1.8 times greater power density than a conventional silicon (Si) module, making it the world’s highest power density. The advance was made possible by implementing a newly designed single-chip structure, as well as a new semiconductor package.

By utilizing this module in various devices, NEDO and Mitsubishi Electric expect to contribute to the expanded usage of smaller and more energy-efficient power electronics equipment for high-voltage railcars and electric power systems.

Photo of a 6.5 kV full-SiC power semiconductor module
Figure. 6.5 kV full-SiC power semiconductor module, which has the world’s highest
power density at 9.3kVA/cm3 (prototype)

For more information, please contact:

NEDO Internet of Things Promotion Department
Contact Persons: Naoshima, Nomura Tel: +81-44-520-5211­