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Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation in High Current Developed
– Will realize highly efficient operation and miniaturization in various power conversion circuits for electronic equipment –

February 23, 2018
New Energy and Industrial Technology Development Organization (NEDO)

As part of a Cabinet Office project managed by NEDO, titled "Cross-ministerial Strategic Innovation Promotion Program (SIP) / Next-Generation Power Electronics," Panasonic Corp. has developed an insulated-gate GaN power transistor, which is capable of continuous stable operation at a high current of 20A. This was not possible with conventional transistors.

The newly developed transistor will facilitate highly efficient operation and miniaturization in power conversion circuits that are used for electronic equipment such as power supplies for servers and base stations.

  • Conventional structure
    Conventional structure: AI2O3 MIS type GaN
  • Newly developed structurer
    Newly developed structure: AION MIS type GaN

Figure. Structure of an insulated-gate GaN power transistor (provided by Panasonic)

For more information, please contact:

NEDO Internet of Things Promotion Department
Contact Persons: Shimba, Nomura   Tel: +81-44-520-5211­