成果報告書詳細
管理番号100013709
タイトル*平成20年度中間年報 平成20年度マスク設計・描画・検査総合最適化技術開発
公開日2009/4/24
報告書年度2008 - 2008
委託先名技術研究組合超先端電子技術開発機構
プロジェクト番号P06018
部署名電子・情報技術開発部
和文要約以下本編抜粋:1マスク設計データ処理技術の研究開発[1]共通データフォーマットの開発マスクパターンの重要度を表すマスクデータランク(Mask Data Rank: MDR)については、EDAツールから設計インテントを抽出してDIF(Design Intent File)を作成し、さらにMDRを作成するソフトウェアツールを、次世代プロセスフレンドリー設計技術開発プロジェクトを実施している半導体理工学研究センター(STARC)およびと北九州市立大学と共同で改良し、主要なEDAツールから、自動的にゲート、クリティカルネット、シールド、ダミー、電源グリッド、リソ・ホットスポットなどのMDRを抽出するフローを完成した。
英文要約Title: Development of Comprehensive Optimization Technologies to Improve Mask Design, Drawing and Inspection (FY 2006-FY2009) FY2008 Annual Report In Mask Design, we advanced researches on [1-1] common and compact data format for mask data preparation, writing and inspection and [1-2] utilization of repeating pattern. In [1-1], we developed software that automatically extracts design intents from commercial EDA tools and converts them into MDR (Mask Data Rank) in corporation with STARC and University of Kitakyushu. Using this software, we verified the reduction of mask drawing and inspection time by using actual device data. In [1-2], we improved software that extracts repeating patterns from mask data after OPC (Optical Proximity Correction) in order to improve the extraction efficiency of line layers. We verified shot count reduction in mask writing using the improved software and actual device data from member companies. We also developed extraction software that extracts repeating patterns from multiple mask data. Using the software, we confirmed that deterioration of extraction efficiency in the extraction from multiple mask data is only a few percent. In Mask Drawing, we advanced researches on [2-1] CP (Character Projection) technology, [2-2] monitoring and self-diagnostics system, [2-3] mask writing based on MDR, and [2-4] parallel writing technology using Multi-Column-Cell (MCC). In [2-1] and [2-4], we examined operation of units such as electron optics, circuits, mechanical units and software. We integrated these units into MCC/CP Proof-of-Concept (POC) system. We started VSB (Variable Shaped Beam) and CP exposure experiments with 4 columns and we also started evaluation of stitching accuracy. In [2-2], we constructed an integrated diagnostic system composed of sub-system for data transfer verification, exposure simulation, analog amplifier monitor and environment monitoring. We confirmed basic operation of the system. We also confirmed 10 nm beam position error detection of high-speed amplifier. In [2-3], we decided appropriate settling waiting time depending on MDR experimentally. In Mask Inspection, we advanced researches on [3-1] high-speed and highly accurate algorithm, [3-2] utilization repeated patterns, [3-3] defect classification based on MDR, and [3-4] defect classification based on its printability. In [3-1], we fabricated multilayer data processing circuit for mask inspection proto-type tool and verified its operation by linking this circuit with the tool. We also improved and verified high-speed pattern viewing software. In [3-2], we examined validity of review support software that utilizes repeating pattern information to judge nuisance. In [3-3], we linked software that changes inspection sensitivity based on MDR with the tool. Using the software, we confirmed that nuisance in mask inspection is identified. In [3-4], we improved an interface between inspection tool and lithography simulator.
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