成果報告書詳細
管理番号20090000000089
タイトル*平成20年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)高度秩序構造を有する薄膜多接合太陽電池の研究開発(メカニカルスタック)
公開日2009/7/30
報告書年度2008 - 2008
委託先名国立大学法人東京農工大学
プロジェクト番号P07015
部署名新エネルギー技術開発部 太陽電池グループ
和文要約以下本編抜粋:1.研究開発の内容及び成果等 (1) 研究開発の内容 高融点無機半導体太陽電池から有機半導体太陽電池まで多種類の材質の太陽電池間の接合を実現するために太陽電池多接合用透明導電接着フィルム(T-ACF)要素技術の開発とその実証を行う。
英文要約Title : Exploring novel thin film multi-junction solar cells with highly-ordered structure(Development of mechanical-stack techniques) (FY2008-FY2010)FY2008 Annual Report
(1) In order to develop techniques of multi-junction with different kinds of solar cells, we have a plan for joining among solar cells using oxide semiconductor fine particles dispersion into transparent and conductive plastic paste (T-ACF). We established equipment for formation of transparent oxide semiconductors particles such as Zinc oxide (ZnO) or Tin oxide (SnO). Oxide semiconductor fine particles are formed by the thermal evaporation method in relative high Ar and O2 partial pressure. In thermal evaporation, ZnO or SnO source powders are inserted into Knudsen cell (K-cell). Heating around melting point and evaporating from K-cell in Ar and O2 gases, the finer oxide semiconductor particles are produced with collision between evaporated molecules and the above gases. (2) We made equipment for system for evaluation of multi-junction solar cells using LEDs with different wavelengths of 590,940, and 1550nm. Moreover PC controlled current measurement system was also combined (3) Characteristics combined with crystalline silicon and germanium solar cells with transparent intermediate electrodes were numerically investigated using a FEM simulator for solar cells (Silvaco Co., Ltd., Luminous). Solar cell characteristics were decreased when the resistance of the intermediate electrodes increased higher than 0.5 ohm/cm2. Substantial optical absorption caused by free carriers at infrared region was also numerically investigated. The calculations have been conducted as well as a self-built free carrier absorption simulator. Free carrier absorption becomes substantial for long wavelength light because of low polarization response caused by free carriers, and free carriers evidently absorb infrared light. The junction resistance should be higher than 0.01 ohm/cm2 if transmission ratio is kept above 99% in the wavelength range up to 2um. therefore We determined the optimum range of resistance of the transparent intermediate electrodes between 0.01 and 0.5 ohm/cm2.
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