成果報告書詳細
管理番号20090000000293
タイトル*平成20年度中間年報 新エネルギー技術研究開発 太陽光発電システム未来技術研究開発 次世代超薄型多結晶シリコン太陽電池の研究開発
公開日2009/8/21
報告書年度2008 - 2008
委託先名シャープ株式会社
プロジェクト番号P07015
部署名新エネルギー技術開発部 太陽電池グループ
和文要約以下本編抜粋:1. 研究開発の内容及び成果等 [研究開発目標] 平成20 年度末目標: 基板厚さ100μ m の多結晶シリコンセルにおいて変換効率18%を実現し、150mm 角相当のプロセスの要素技術を確立する。 平成21 年度最終目標:基板厚さ100μm、サイズ150mm 角の多結晶シリコンセルにおいて変換効率18%を実現し、超薄型セルを用いたモジュール製造工程の課題抽出と対応策の検討。
英文要約Objective: FY2008: To achieve a conversion efficiency of 18 % for multicrystalline silicon solar cell (Thickness is 100 micrometer.) and to establish the element technologies of the process for 150mm square size cell fabrication, FY2009: To achieve a conversion efficiency of 18 % for multicrystalline silicon solar cell (150 x 150 mm substrate, Thickness is 100 micrometer.) and to find the methods of manufacturing the module suitable for the ultra thin silicon solar cell. Results: For the front side of solar cell, as technology for increase of incident light, we got 30 micrometer width screen-printed front sub-electrodes by improvement of the printing process and reduced the front electrode area. For the back side of solar cell, we fabricated back side passivation type cells by applying a SiN film as a passivation layer. We investigated surface preparation before SiN film formation, contact pattern, p+ layer at contact region and so on beforehand. For 100 micrometer thick cells, short circuit current density (Jsc) was improved by about 2mA/cm2 and open circuit voltage (Voc) was improved by about 10mV compared to conventional Al-BSF type cell. It became clear that the improvement of Jsc and Voc was due to effect of back side passivation structure as indicated by the improvement of internal quantum efficiency in the long wave length region. From these improvements a cell efficiency of 18.1% was obtained for back side SiN passivation type 100 micrometer thick cell (size: 10cm square). For a construction of fabrication process of the ultra thin silicon solar cell, we eliminated Al paste firing process by introduction of the back side passivation structure and also reduced the width of screen-printed Ag front sub-electrode to 30 micrometer for reduction of the stress caused by Al/Si and Ag/Si bimetallic effect. By these improvements, we reduced bowing of substrate in the way of cell process and a completed 100 micrometer thick cell drastically compared to conventional Al-BSF type cell. For an evaluation of the substrate fabricated by the dendritic casting method, we evaluated the distribution of cell efficiency in the growth direction of the ingot. The cell conversion efficiency of 18.2% was obtained for this ingot in FY2007. Cell efficiencies around 18% were obtained for wide range of growth direction.
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