成果報告書詳細
管理番号20090000000311
タイトル*平成20年度中間年報 新エネルギー技術研究開発 革新的太陽光発電技術研究開発(革新型太陽電池国際研究拠点整備事業)ポストシリコン超高効率太陽電池の研究開発(多結晶化合物多接合太陽電池)
公開日2009/8/21
報告書年度2008 - 2008
委託先名国立大学法人大阪大学
プロジェクト番号P07015
部署名新エネルギー技術開発部 太陽電池グループ
和文要約以下本編抜粋:1. 研究開発の内容及び成果等 (1)事業概要 本開発項目では、新概念、新技術の太陽電池の研究開発の一部として、非III-V族系化合物半導体材料による新規太陽電池の開発を目的に、1) 化合物半導体材料開発と、2) 多結晶化合物半導体薄膜を用いた多接合太陽電池作製技術の実証を行う。 ただし、2) に関しては、平成2 2 年度までは、多接合太陽電池を開発するための前段階として、多結晶化合物半導体太陽電池の作製技術に関する開発研究を進める。
英文要約Title:Multijunctions Solar Cells Made of Multicrystalline Compound Semiconductors (FY2008-2009) FY2008 Annual Report  (A) Development of materials Synthesis of Cu-chalcogenide compounds: We used complexes made of metal ions and S-containing organic anions as source materials for synthesizing Cu-chalcogenide compounds. By applying heat treatment at about 300 -C to the complexes, we obtain powders of CuInS2 and Cu2ZnSnS4, which are useful source materials for fabricating solar cells. The method is advantageous in controlling the components and stoichiometry of elements in included in the compounds. Fabrication of thin films of Cu-chalcogenide compounds: We obtained thin films of Cu-chalcogenide compounds using the powders, which were synthesized by the above method. In the process, the films were prepared by spreading the powder by spin casting, followed by annealing. (B) Development of solar cells made of multicrystalline compound semiconductors Electrochemical deposition of CuInSe2 films: We loaded a CdS layer by chemical bath deposition on FTO-coated glass plates and used as substrates. We deposited CuInSe2 films on the substrates by electrochemistry. When a cathodic potential of about - 0.55 V vs Ag/AgCl was applied to the substrate in aqueous solution containing CuCl2, InCl3 and H2SeO3, CuInSe2 films were deposited on the substrates. From the analysis of the film by XRD and SEM, we found that the films contained a small amount of CuxSe. The content of CuxSe increased when the films were deposited at potentials more positive than - 0.55 V vs Ag/AgCl.  Annealing of the CuInSe2 films deposited by electrochemistry: The CuInSe2 films deposited by electrochemistry were annealed in closed glass tubes containing sulfur vapor at 320 - 400 -C. The size of the crystallites included in the films was increased by the annealing. In addition, the Se component included in the films was partly replaced by S. The content of S increased as the annealing temperature increased. As a result of the inclusion of S element into the films, the band gap of the film changed from 1.04 (without annealing) to 1.42 eV (annealed at 380 -C). When all Se was replaced by S, the band gap reached 1.53 eV which was consistent with the band gap of CuInS2. Fabrication of solar cells using the CuInSxSe2-x films: We fabricated solar cells by depositing an Au layer on the top of the CuInSxSe2-x films, which had been annealed at different temperatures. The solar cell made of the CuInSxSe2-x films annealed at 350 -C showed a short-circuit photocurrent density of 22 mA/cm2 and an energy conversion efficiency of 2.4%. We expect that the efficiency will be improved by optimizing the film fabrication conditions.
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